Article
Physics, Applied
Roman Potjan, Marcus Wislicenus, Oliver Ostien, Raik Hoffmann, Maximilian Lederer, Andre Reck, Jennifer Emara, Lisa Roy, Benjamin Lilienthal-Uhlig, J. Wosnitza
Summary: This study demonstrates the fully CMOS-compatible fabrication of HfN and ZrN thin films and investigates their physical properties. The results show that HfN and ZrN samples exhibit superconducting phase transitions and have high critical temperatures and fields, indicating their potential application in quantum computing and related fields.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Johannes Hertel, Caroline Schwinge, Lukas Gerlich, Maik Wagner-Reetz
Summary: In this study, the thermoelectric properties of Ru2Si3 thin films were characterized, showing exceptionally high Seebeck coefficients close to room temperature in dependency of adjustable oxide nanoskins formed via rapid thermal processing.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Zihao Yang, Xiucheng Wei, Pinku Roy, Di Zhang, Ping Lu, Samyak Dhole, Haiyan Wang, Nicholas Cucciniello, Nag Patibandla, Zhebo Chen, Hao Zeng, Quanxi Jia, Mingwei Zhu
Summary: We have achieved large-scale, ultrathin superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing PVD system. The NbN thin films exhibit remarkable structural uniformity and high superconducting quality across the entire wafer, thanks to the use of an AlN buffer layer. The NbN films deposited on AlN-buffered Si substrates show significantly higher superconducting critical temperature and upper critical magnetic field compared to those without AlN.
Article
Chemistry, Multidisciplinary
Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry A. Serov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, Evgeny G. Gryaznov, Elena S. Orlova, Sergey A. Shchanikov, Alexey N. Mikhaylov, Sungjun Kim
Summary: The electrical characteristics and resistive switching properties of memristive devices using silicon oxide and titanium nitride as the insulator and electrode materials have been studied. The as-fabricated devices do not require electroforming, but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior, where filaments form in the insulator due to the effect of traps. These devices can be easily integrated with traditional analog-digital circuits to implement new-generation hardware neuromorphic systems.
Article
Engineering, Electrical & Electronic
Yusheng Bian, Koushik Ramachandran, Zhuo-Jie Wu, Brittany Hedrick, Kevin K. Dezfulian, Thomas Houghton, Karen Nummy, Daniel W. Fisher, Takako Hirokawa, Keith Donegan, Francis O. Afzal, Monica Esopi, Vaishnavi Karra, Won Suk Lee, Massimo Sorbara, Jorge Lubguban, Jae Kyu Cho, Rongtao Cao, Hanyi Ding, Sujith Chandran, Michal Rakowski, Abdelsalam Aboketaf, Subramanian Krishnamurthy, Scott Mills, Bo Peng, Jeff Pepper, Suruj Deka, Wen Feng, Steven Rishton, Marcel Boudreau, Dylan Logan, Ryan Hickey, Prova Christina Gomes, Kyle Murray, Arnab Dewanjee, Dave Riggs, Norman Robson, Ian Melville, Rod Augur, Robert Fox, Vikas Gupta, Anthony Yu, Ken Giewont, John Pellerin, Ted Letavic
Summary: Enabling cost-effective and power-efficient laser source on a silicon photonics (SiPh) platform is a major goal. In this study, we achieved hybrid flip-chip integration of III-V lasers on a 300-mm monolithic SiPh platform. We demonstrated efficient laser-to-SiPh-circuit butt-coupling with optical power up to 20 mW and characterized key performance metrics after laser integration. Additionally, we explored alternative spot-size converters to enhance coupling efficiency and relaxed fabrication tolerance.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2023)
Article
Optics
Mark Dong, Genevieve Clark, Andrew J. Leenheer, Matthew Zimmermann, Daniel Dominguez, Adrian J. Menssen, David Heim, Gerald Gilbert, Dirk Englund, Matt Eichenfield
Summary: The study introduces a large-scale MZM platform that utilizes high-speed and low-power aluminium nitride piezo-optomechanical actuators for faster phase modulation and low-loss propagation in photonic integrated circuits. This platform has the potential to enable fully integrated device architecture for a range of quantum applications.
Article
Physics, Applied
V. P. Popov, V. A. Antonov, F. Tikhonenko, S. M. Tarkov, A. K. Gutakovskii, I. E. Tyschenko, A. Miakonkikh, A. A. Lomov, A. E. Rogozhin, K. Rudenko
Summary: Silicon wafers with ultrathin buried high-k oxide layers were fabricated by atomic layer deposition, showing high thermal stability up to 1100 degrees C in silicon-on-ferroelectric structures. Silicon-ferroelectric-silicon structures with hafnia BOX and alumina inclusions demonstrated increased thermal stability for hafnia or hafnia-zirconia alloys up to 900 degrees C, making them compatible with current CMOS technology, promising integrated circuits for neuromorphic computation and optoelectronic switching devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Optics
Chenghan Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin, Kevin Vandersmissen, Arantxa Maestre, Alba Centeno, Amaia Zurutuza, Joris Van Campenhout, Cedric Huyghebaert, Dries Van Thourhout, Marianna Pantouvaki
Summary: Graphene-based single-layer electro-absorption modulators have been successfully integrated in a 300mm pilot CMOS foundry environment. Through analysis of data from hundreds of devices, the impact of specific processing steps on performance was identified and optimized. The results achieved, with a modulation depth of 50+/-4 dB mm(-1) and an electro-optical bandwidth of 15.1+/-1.8 GHz, are comparable to lab-based record-setting graphene devices. By demonstrating the reproducibility of results across multiple devices, this work overcomes the bottleneck of graphene wafer-scale integration and enables co-integration with other building blocks for high-volume, low-cost manufacturing.
LASER & PHOTONICS REVIEWS
(2023)
Article
Optics
Weiqiang Xie, Peter Verheyen, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout
Summary: This work demonstrates ultrahigh-Q one-dimensional (1D) PhC nanocavities fabricated on a 300 mm silicon-on-insulator wafer, with a record Q factor of up to 0.84 million. Efficient mode management is shown by coupling them with an access waveguide, allowing both single-wavelength and multi-wavelength operation over a broad wavelength range (>100 nm).
LASER & PHOTONICS REVIEWS
(2021)
Article
Engineering, Electrical & Electronic
Han Wui Then, M. Radosavljevic, Q. Yu, A. Latorre-Rey, H. Vora, S. Bader, I. Momson, D. Thomson, M. Beumer, P. Koirala, J. Peck, A. Oni, T. Hoff, R. Jordan, T. Michaelos, N. Nair, P. Nordeen, A. Vyatskikh, I. Ban, A. Zubair, S. Rami, P. Fischer
Summary: This article demonstrates a 300 mm GaN-on-Si(111) high-k gate dielectric E-mode GaN MOSHEMT technology with uniform process and wafer characteristics. The technology enables an E-mode GaN MOSHEMT with L-G = 90 nm, L-GS = L-GD = 80 nm using 300 mm process capabilities. The GaN MOSHEMT exhibits excellent ON/OFF characteristics, low leakages, low R-on, high I-D, and f(T)/f(MAX) of 140/280 GHz.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Kiryong Song, Doyoon Kim, Jungsoo Kim, Junghwan Yoo, Wooyong Keum, Jae-Sung Rieh
Summary: A terahertz (THz) CMOS detector array based on multiple chips stitched together is scalable and can be controlled flexibly with a modular scheme. The distribution of responsivity and noise equivalent power over the multichip array can be suppressed with proper calibration for nonuniformities caused by series resistance and other factors across pixels and chips.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2022)
Article
Chemistry, Multidisciplinary
Dahye Kim, Jihyung Kim, Seokyeon Yun, Jungwoo Lee, Euncho Seo, Sungjun Kim
Summary: This paper proposes a ferroelectric tunnel junction using hafnium aluminum oxide as the ferroelectric layer, and demonstrates its capability as a synaptic device through electrical analysis and experiments. The maximum remanent polarization and threshold electric field values are evaluated for different device conditions. Furthermore, the study shows that the hafnium aluminum oxide-based junction can exhibit synaptic plasticity and be utilized for reservoir computing. The synaptic properties of the ferroelectric tunnel junction are verified for the feasibility of its implementation as an artificial synaptic device.
Article
Chemistry, Multidisciplinary
Wenkai Liu, Songsong Chen, Yun Liu, Zhican Wen, Fuman Jiang, Zhongying Xue, Xing Wei, Yuehui Yu
Summary: A local three-dimensional model of heat and mass transfer is proposed for 300 mm Czochralski silicon crystal growth with a transverse magnetic field. The model includes a PID control system and main physical effects such as release of crystallization latent heat, crystallization interface correction, Marangoni effects, oxygen transport, and electromagnetic effects. A method for crystallization interface correction is developed, particularly suitable for non-axisymmetric flow when the crystal rotates. Simulation results show that temperature, growth-rate, and oxygen concentration on the crystallization interface are influenced by melt convection. The model is validated at different solidified fractions, and the simulation results of oxygen concentration are in good agreement with experimental results.
Article
Optics
Hui Ma, Haotian Yang, Bo Tang, Maoliang Wei, Junying Li, Jianghong Wu, Peng Zhang, Chunlei Sun, Lan Li, Hongtao Lin
Summary: In this work, passive devices for the 2 μm waveband were fabricated in a silicon photonic multi-project wafer process, including a micro-ring resonator, waveguide crossing, multimode interferometer, and Mach-Zehnder interferometer. Experimental results showed that these devices performed well in the 2 μm waveband, providing important insights for the development of the 2 μm silicon photonic platform.
CHINESE OPTICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Shivam Verma, Ravneet Paul, Mayank Shukla
Summary: This article introduces a novel non-volatile latch for logic-in-memory computing. The proposed latch has a simple design, high stability, and compatibility with CMOS logic styles. It also has fewer transistors and lower power consumption. Additionally, the write circuit is modified to reduce power consumption and area requirement.
IEEE TRANSACTIONS ON MAGNETICS
(2022)
