Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory

NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration

(2023) Yinglin Zhao et al.   Science China-Information Sciences

Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing

(2021) Yanan Zhong et al.   Nature Communications

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

(2021) Wenlong Cai et al.   IEEE ELECTRON DEVICE LETTERS

A survey of in-spin transfer torque MRAM computing

(2021) Hao Cai et al.   Science China-Information Sciences

Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage

(2021) Zhe Guo et al.   Advanced Electronic Materials

Spintronics for Energy- Efficient Computing: An Overview and Outlook

(2021) Zongxia Guo et al.   PROCEEDINGS OF THE IEEE

Stateful implication logic based on perpendicular magnetic tunnel junctions

(2021) Wenlong Cai et al.   Science China-Information Sciences

Fully hardware-implemented memristor convolutional neural network

(2020) Peng Yao et al.   NATURE

Crack-Based Complementary Nanoelectromechanical Switches for Reconfigurable Computing

(2020) Qiang Luo et al.   IEEE ELECTRON DEVICE LETTERS

ReRAM: History, Status, and Future

(2020) Yangyin Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing

(2020) Kun Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors

(2020) Rui Yuan et al.   Science China-Information Sciences

Nanoscale resistive switching memory devices: a review

(2019) Stefan Slesazeck et al.   NANOTECHNOLOGY

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices

(2019) Shouzhong Peng et al.   Advanced Electronic Materials

Memcomputing: fusion of memory and computing

(2018) Yi Li et al.   Science China-Information Sciences

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

(2018) Mengxing Wang et al.   Nature Communications

memristor devices for neural networks

(2018) Hongsik Jeong et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

(2017) Zhuo-Rui Wang et al.   IEEE ELECTRON DEVICE LETTERS

Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell

(2016) Shuang Gao et al.   Nanoscale

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Memristors for Energy-Efficient New Computing Paradigms

(2016) Doo Seok Jeong et al.   Advanced Electronic Materials

Memory leads the way to better computing

(2015) H.-S. Philip Wong et al.   Nature Nanotechnology

A new spin on magnetic memories

(2015) Andrew D. Kent et al.   Nature Nanotechnology

Spin-transfer torque magnetic random access memory (STT-MRAM)

(2013) Dmytro Apalkov et al.   ACM Journal on Emerging Technologies in Computing Systems

Logic Computation in Phase Change Materials by Threshold and Memory Switching

(2013) M. Cassinerio et al.   ADVANCED MATERIALS

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

(2013) Y. Li et al.   JOURNAL OF APPLIED PHYSICS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture

(2010) Andrew Lyle et al.   APPLIED PHYSICS LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE