Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing

Published 2020 View Full Article

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Title
Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 6, Pages 928-931
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-04-14
DOI
10.1109/led.2020.2987211

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