Effect of annealing on forming-free bipolar resistive switching of Gd2O3 thin films

Multilevel operation of GdOx-based resistive switching memory device fabricated by post-deposition annealing

(2021) Hee Ju Yun et al.   CERAMICS INTERNATIONAL

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

(2021) Nayan C. Das et al.   Micromachines

Annealing Effect of Glancing Angle Electron Beam Deposited TiO2/In2O3 Nanowires Array on Surface Wettability

(2020) Pheiroijam Pooja et al.   Scientific Reports

Effects of annealing temperature on the resistance switching behaviour of solution-processed ZnO thin films

(2020) M. Raveendra Kiran et al.   SUPERLATTICES AND MICROSTRUCTURES

Effect of annealing on chemical, structural and electrical properties of Au/Gd 2 O 3 /n-GaN heterostructure with a high-k rare-earth oxide interlayer

(2018) C.Venkata Prasad et al.   APPLIED SURFACE SCIENCE

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

(2018) Qing Luo et al.   IEEE ELECTRON DEVICE LETTERS

Effects of annealing on the temperature coefficient of resistance of nickel film deposited on polyimide substrate

(2018) Baoyun Sun et al.   VACUUM

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

(2016) Somsubhra Chakrabarti et al.   Nanoscale Research Letters

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

(2016) Guangyu Wang et al.   Scientific Reports

Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

(2016) Ming Xiao et al.   Nano-Micro Letters

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

(2016) Somsubhra Chakrabarti et al.   Nanoscale Research Letters

Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

(2016) Ming Xiao et al.   Nano-Micro Letters

Abnormal bipolar resistive switching behavior in a Pt/GaO1.3/Pt structure

(2015) D. Y. Guo et al.   APPLIED PHYSICS LETTERS

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3thin films

(2015) Zeng-Xing Lu et al.   Chinese Physics B

Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices

(2015) Tsung-Ling Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Flexible Memristive Memory Array on Plastic Substrates

(2011) Seungjun Kim et al.   NANO LETTERS

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

(2010) Xinman Chen et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistance switching in polycrystalline BiFeO3 thin films

(2010) Kuibo Yin et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching effect in Gd2O3 films for transparent memory application

(2010) Kou-Chen Liu et al.   MICROELECTRONIC ENGINEERING

Resistive switching effects of HfO2 high-k dielectric

(2008) M.Y. Chan et al.   MICROELECTRONIC ENGINEERING

Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods

(2008) A. Tataroğlu et al.   MICROELECTRONIC ENGINEERING