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Title
Resistive switching memory behaviours of MoSe2 nano-islands array
Authors
Keywords
Anodic Aluminum Oxide, Resistive Switching, High Resistance State, Resistive Random Access Memory, Memory Window
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 27, Issue 7, Pages 7609-7613
Publisher
Springer Nature
Online
2016-03-31
DOI
10.1007/s10854-016-4744-6
References
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