Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators

Title
Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators
Authors
Keywords
Graphene Oxide, Threshold Voltage, Gate Voltage, Drain Current, Pentacene
Journal
Publisher
Springer Nature
Online
2016-02-03
DOI
10.1007/s10854-016-4426-4

Ask authors/readers for more resources

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now