Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators
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Title
Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators
Authors
Keywords
Graphene Oxide, Threshold Voltage, Gate Voltage, Drain Current, Pentacene
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 27, Issue 5, Pages 5284-5293
Publisher
Springer Nature
Online
2016-02-03
DOI
10.1007/s10854-016-4426-4
References
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