Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators

标题
Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators
作者
关键词
Graphene Oxide, Threshold Voltage, Gate Voltage, Drain Current, Pentacene
出版物
出版商
Springer Nature
发表日期
2016-02-03
DOI
10.1007/s10854-016-4426-4

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