Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol–gel method

Title
Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol–gel method
Authors
Keywords
-
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 521, Issue -, Pages 155-162
Publisher
Elsevier BV
Online
2012-01-31
DOI
10.1016/j.jallcom.2012.01.103

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now