- Home
- Publications
- Publication Search
- Publication Details
Title
Surface states in a monolayer MoS2 transistor
Authors
Keywords
-
Journal
JOURNAL OF MATERIALS RESEARCH
Volume 31, Issue 07, Pages 911-916
Publisher
Cambridge University Press (CUP)
Online
2016-01-26
DOI
10.1557/jmr.2015.405
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
- (2015) Yao Guo et al. APPLIED PHYSICS LETTERS
- Trap density probing on top-gate MoS2nanosheet field-effect transistors by photo-excited charge collection spectroscopy
- (2015) Kyunghee Choi et al. Nanoscale
- Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
- (2014) Tao Li et al. APPLIED PHYSICS LETTERS
- Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
- (2013) Meeghage Madusanka Perera et al. ACS Nano
- High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
- (2013) Hsiao-Yu Chang et al. ACS Nano
- Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors
- (2013) Kyungjune Cho et al. ACS Nano
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
- (2013) Wei Liu et al. NANO LETTERS
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Valley-selective circular dichroism of monolayer molybdenum disulphide
- (2012) Ting Cao et al. Nature Communications
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- (2011) Subhamoy Ghatak et al. ACS Nano
- Mobility Extraction for Nanotube TFTs
- (2011) Zhiying Liu et al. IEEE ELECTRON DEVICE LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Visibility of dichalcogenide nanolayers
- (2011) M M Benameur et al. NANOTECHNOLOGY
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Reduction of hysteresis for carbon nanotube mobility measurements using pulsed characterization
- (2010) David Estrada et al. NANOTECHNOLOGY
- Pulsed gate sweep strategies for hysteresis reduction in carbon nanotube transistors for low concentration NO2gas detection
- (2010) M Mattmann et al. NANOTECHNOLOGY
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now