Resistive Switching in Mott Insulators and Correlated Systems

Electric-Field-Driven Resistive Switching in the Dissipative Hubbard Model

(2015) Jiajun Li et al.   PHYSICAL REVIEW LETTERS

Evidence for photo-induced monoclinic metallic VO2 under high pressure

(2014) Wen-Pin Hsieh et al.   APPLIED PHYSICS LETTERS

Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications

(2014) J Tranchant et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

(2014) Justin S. Brockman et al.   Nature Nanotechnology

Control of resistive switching in AM4Q8narrow gap Mott insulators: A first step towards neuromorphic applications

(2014) Julien Tranchant et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Nonthermal and purely electronic resistive switching in a Mott memory

(2014) P. Stoliar et al.   PHYSICAL REVIEW B

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D SystemGaTa4Se8

(2014) A. Camjayi et al.   PHYSICAL REVIEW LETTERS

Nonequilibrium dynamical mean-field theory and its applications

(2014) Hideo Aoki et al.   REVIEWS OF MODERN PHYSICS

Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

(2013) Pablo Stoliar et al.   ADVANCED MATERIALS

The Memristive Properties of a Single VO2Nanowire with Switching Controlled by Self-Heating

(2013) Sung-Hwan Bae et al.   ADVANCED MATERIALS

Electrical breakdown in a V2O3device at the insulator-to-metal transition

(2013) S. Guénon et al.   EPL

Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8

(2013) B. Corraze et al.   European Physical Journal-Special Topics

Review of Emerging New Solid-State Non-Volatile Memories

(2013) Yoshihisa Fujisaki   JAPANESE JOURNAL OF APPLIED PHYSICS

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

(2013) Seonghyun Kim et al.   MICROELECTRONIC ENGINEERING

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

(2013) Vincent Dubost et al.   NANO LETTERS

Structural and electronic recovery pathways of a photoexcited ultrathin VO2film

(2013) Haidan Wen et al.   PHYSICAL REVIEW B

Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition inVO2

(2013) A. Zimmers et al.   PHYSICAL REVIEW LETTERS

Optical Conductivity Measurements ofGaTa4Se8Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition

(2013) V. Ta Phuoc et al.   PHYSICAL REVIEW LETTERS

Avalanche breakdown in GaTa4Se8−xTe x narrow-gap Mott insulators

(2013) V. Guiot et al.   Nature Communications

Insulator–Metal Transitions Induced by Electric Field and Photoirradiation in Organic Mott Insulator Deuterated κ-(BEDT-TTF)2Cu[N(CN)2]Br

(2012) Farzana Sabeth et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

(2012) Matthew D Pickett et al.   NANOTECHNOLOGY

Vanadium Dioxide: A Peierls-Mott Insulator Stable against Disorder

(2012) Cédric Weber et al.   PHYSICAL REVIEW LETTERS

Site-Selective Mott Transition in Rare-Earth-Element Nickelates

(2012) Hyowon Park et al.   PHYSICAL REVIEW LETTERS

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

(2012) E. Souchier et al.   THIN SOLID FILMS

Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers

(2012) J. Tranchant et al.   THIN SOLID FILMS

Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8–yTey(0 ≤y≤ 6.5)

(2011) V. Guiot et al.   CHEMISTRY OF MATERIALS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Lattice softening effects at the Mott critical point of Cr-doped V2O3

(2011) S. Populoh et al.   PHYSICAL REVIEW B

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

(2010) Laurent Cario et al.   ADVANCED MATERIALS

Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films

(2010) Kentaro Kinoshtia et al.   APPLIED PHYSICS LETTERS

Nanoscale imaging and control of resistance switching in VO2 at room temperature

(2010) Jeehoon Kim et al.   APPLIED PHYSICS LETTERS

Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process

(2010) Takeshi Yajima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8

(2010) Eugen Dorolti et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

First evidence of resistive switching in polycrystalline GaV4S8 thin layers

(2010) Emeline Souchier et al.   Physica Status Solidi-Rapid Research Letters

Nonequilibrium electronic transport in a one-dimensional Mott insulator

(2010) F. Heidrich-Meisner et al.   PHYSICAL REVIEW B

Dielectric breakdown in a Mott insulator: Many-body Schwinger-Landau-Zener mechanism studied with a generalized Bethe ansatz

(2010) Takashi Oka et al.   PHYSICAL REVIEW B

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Negative Volume Thermal Expansion Via Orbital and Magnetic Orders inCa2Ru1−xCrxO4(0

(2010) T. F. Qi et al.   PHYSICAL REVIEW LETTERS

Dielectric Breakdown of Mott Insulators in Dynamical Mean-Field Theory

(2010) Martin Eckstein et al.   PHYSICAL REVIEW LETTERS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

A microscopic view on the Mott transition in chromium-doped V2O3

(2010) S. Lupi et al.   Nature Communications

Electric-Field-Assisted Nanostructuring of a Mott Insulator

(2009) Vincent Dubost et al.   ADVANCED FUNCTIONAL MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Phase-transition driven memristive system

(2009) T. Driscoll et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of MnOx-based ReRAM

(2009) Sen Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Origin of hysteresis in resistive switching in magnetite is Joule heating

(2009) A. A. Fursina et al.   PHYSICAL REVIEW B

Quasiparticles at the Mott Transition inV2O3: Wave Vector Dependence and Surface Attenuation

(2009) F. Rodolakis et al.   PHYSICAL REVIEW LETTERS

Taming the Mott Transition for a Novel Mott Transistor

(2008) Isao H. Inoue et al.   ADVANCED FUNCTIONAL MATERIALS

Electric-Pulse-driven Electronic Phase Separation, Insulator-Metal Transition, and Possible Superconductivity in a Mott Insulator

(2008) Cristian Vaju et al.   ADVANCED MATERIALS

Metal−Metal Bonding and Correlated Metallic Behavior in the New Deficient Spinel Ga0.87Ti4S8

(2008) C. Vaju et al.   CHEMISTRY OF MATERIALS

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

(2008) Kohei Fujiwara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8

(2008) C. Vaju et al.   MICROELECTRONIC ENGINEERING

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Magnetoresistive Random Access Memory: The Path to Competitiveness and Scalability

(2008) Jian-Gang Zhu   PROCEEDINGS OF THE IEEE