Control of resistive switching in AM4Q8narrow gap Mott insulators: A first step towards neuromorphic applications

Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications

(2014) J Tranchant et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

(2013) Pablo Stoliar et al.   ADVANCED MATERIALS

Avalanche breakdown in GaTa4Se8−xTe x narrow-gap Mott insulators

(2013) V. Guiot et al.   Nature Communications

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

(2012) E. Souchier et al.   THIN SOLID FILMS

Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers

(2012) J. Tranchant et al.   THIN SOLID FILMS

Memory effects in complex materials and nanoscale systems

(2011) Yuriy V. Pershin et al.   ADVANCES IN PHYSICS

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

(2010) Laurent Cario et al.   ADVANCED MATERIALS

First evidence of resistive switching in polycrystalline GaV4S8 thin layers

(2010) Emeline Souchier et al.   Physica Status Solidi-Rapid Research Letters

Electric-Pulse-driven Electronic Phase Separation, Insulator-Metal Transition, and Possible Superconductivity in a Mott Insulator

(2008) Cristian Vaju et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today