Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surface

Progresses in state-of-the-art technologies of Ga2O3 devices

(2021) Chenlu Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

(2021) Qinglong Yan et al.   APPLIED PHYSICS LETTERS

Reduction of MOS interfacial states between β-Ga2O3 and Al2O3 insulator by self-reaction etching with Ga flux

(2021) Boyuan Feng et al.   APPLIED PHYSICS LETTERS

Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

(2021) Chenlu Wang et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes

(2021) Haoxun Luo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep level study of chlorine-based dry etched β − Ga2O3

(2021) G. Alfieri et al.   JOURNAL OF APPLIED PHYSICS

Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination

(2021) Qiming He et al.   IEEE ELECTRON DEVICE LETTERS

1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness

(2021) Feng Zhou et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2

(2021) Yuan Wang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

(2020) Zhuangzhuang Hu et al.   IEEE ELECTRON DEVICE LETTERS

1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2

(2020) Xing Lu et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing

(2020) Yanni Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Device processing and junction formation needs for ultra-high power Ga2O3 electronics

(2019) Fan Ren et al.   MRS Communications

Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

(2019) A. Y. Polyakov et al.   APL Materials

Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments

(2019) Hoon-Ki Lee et al.   APPLIED SURFACE SCIENCE

Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2

(2019) Wenshen Li et al.   IEEE ELECTRON DEVICE LETTERS

Effect of OH− on chemical mechanical polishing of β-Ga2O3 (100) substrate using an alkaline slurry

(2018) Chuanjin Huang et al.   RSC Advances

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Effect of chemical action on the chemical mechanical polishing of β-Ga2O3(100) substrate

(2018) Chuanjin Huang et al.   PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY

First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

(2017) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B