Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching

The source of the Ti 3d defect state in the band gap of rutile titania (110) surfaces

(2012) K. Mitsuhara et al.   JOURNAL OF CHEMICAL PHYSICS

Intrinsic Nature of the Excess Electron Distribution at theTiO2(110)Surface

(2012) P. Krüger et al.   PHYSICAL REVIEW LETTERS

Metal–insulator transition induced by non-stoichiometry of surface layer and molecular reactions on single crystal KTaO3

(2012) Jerzy Kubacki et al.   SURFACE SCIENCE

Efficient resistive memory effect on SrTiO3 by ionic-bombardment

(2011) Heiko Gross et al.   APPLIED PHYSICS LETTERS

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

(2010) Min Hwan Lee et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Oxygen Vacancy Origin of the Surface Band-Gap State ofTiO2(110)

(2010) C. M. Yim et al.   PHYSICAL REVIEW LETTERS

XPS studies of perovskites surface instability caused by Ar+ ion and electron bombardment and metal deposition

(2009) Bronisław Psiuk et al.   VACUUM

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE