Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

Electrical properties of extended defects in III-nitrides

(2015) Albert Minj et al.   ACTA MATERIALIA

Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors

(2015) I. Saidi et al.   SUPERLATTICES AND MICROSTRUCTURES

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

(2013) R. Tülek et al.   THIN SOLID FILMS

Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices

(2012) D. Godwinraj et al.   SUPERLATTICES AND MICROSTRUCTURES

Characterization of AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes

(2011) Yusuke Sakai et al.   JOURNAL OF APPLIED PHYSICS

The influence of thickness and ammonia flow rate on the properties of AlN layers

(2011) S. Çörekçi et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure

(2011) Hongbo Yu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Indium segregation in AlInN/AlN/GaN heterostructures

(2010) A. Minj et al.   APPLIED PHYSICS LETTERS

The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates

(2010) H. Kim-Chauveau et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

(2010) S. Çörekçi et al.   JOURNAL OF MATERIALS SCIENCE

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

(2009) Remziye Tülek et al.   JOURNAL OF APPLIED PHYSICS

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS