The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate
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Title
The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate
Authors
Keywords
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Journal
Scientific Reports
Volume 12, Issue 1, Pages -
Publisher
Springer Science and Business Media LLC
Online
2022-07-15
DOI
10.1038/s41598-022-16298-w
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