Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

(2017) Ahmet Avsar et al.   NANO LETTERS

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

(2017) Xu Cui et al.   NANO LETTERS

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

(2017) Ya-Qing Bie et al.   Nature Nanotechnology

Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity

(2017) Yongzhuo Li et al.   Nature Nanotechnology

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

(2017) Xiao-Xi Li et al.   Nature Communications

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

(2016) Shu Nakaharai et al.   ACS Applied Materials & Interfaces

Fast High-Responsivity Few-Layer MoTe2Photodetectors

(2016) Tobias J. Octon et al.   Advanced Optical Materials

Raman scattering of few-layers MoTe2

(2016) M Grzeszczyk et al.   2D Materials

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

(2015) Shu Nakaharai et al.   ACS Nano

Semiconducting black phosphorus: synthesis, transport properties and electronic applications

(2015) Han Liu et al.   CHEMICAL SOCIETY REVIEWS

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

(2015) Ignacio Gutiérrez Lezama et al.   NANO LETTERS

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Bandgap opening in few-layered monoclinic MoTe 2

(2015) Dong Hoon Keum et al.   Nature Physics

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2

(2015) Luyi Yang et al.   Nature Physics

Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer

(2015) Mojtaba Farmanbar et al.   PHYSICAL REVIEW B

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

Surface transport and band gap structure of exfoliated 2H-MoTe2crystals

(2014) Ignacio Gutiérrez Lezama et al.   2D Materials

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

(2013) Jen-Ru Chen et al.   NANO LETTERS

Hopping transport through defect-induced localized states in molybdenum disulphide

(2013) Hao Qiu et al.   Nature Communications

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS