Density functional theory study of quaternary InPBiN alloys lattice matched to InP substrate: Structural, electronic and optical properties

Electronic properties and band offsets in InP(1−x−y)BixNy

(2019) Kailin Wang et al.   MODERN PHYSICS LETTERS B

A density functional theory investigation of the structural and optoelectronic properties of InP 1−x Bi x alloys

(2018) Mohamed Gandouzi et al.   COMPUTATIONAL MATERIALS SCIENCE

Structural and opto-electronic properties of InP 1−x Bi x bismide alloys for MID−infrared optical devices: A DFT + TB-mBJ study

(2017) Abdenacer Assali et al.   PHYSICA B-CONDENSED MATTER

Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model

(2017) K. Chakir et al.   THIN SOLID FILMS

Electronic and optical properties of Al x Ga y In 1 − x − y As quaternary alloys with and without relaxation lattice matched to InP for laser applications: First-principles study

(2016) Miloud Benchehima et al.   OPTIK

Influence of Bi-related impurity states on the bandgap and spin–orbit splitting energy of dilute III–V-Bi alloys: InP1−xBix, InAs1−xBix, InSb1−xBix and GaSb1−xBix

(2016) D.P. Samajdar et al.   SUPERLATTICES AND MICROSTRUCTURES

Bi-induced band gap reduction in epitaxial InSbBi alloys

(2014) M. K. Rajpalke et al.   APPLIED PHYSICS LETTERS

Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1−xBix dilute bismide with x ≤ 0.034

(2014) J. Kopaczek et al.   APPLIED PHYSICS LETTERS

Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model

(2014) M.M. Habchi et al.   INFRARED PHYSICS & TECHNOLOGY

The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy

(2014) T. D. Das   JOURNAL OF APPLIED PHYSICS

The electronic and optical properties of quaternary GaAs1-x-yNxBiy alloy lattice-matched to GaAs: a first-principles study

(2014) Xiaoyang Ma et al.   Nanoscale Research Letters

Electronic band structure calculation of GaNAsBi alloys and effective mass study

(2013) M.M. Habchi et al.   INFRARED PHYSICS & TECHNOLOGY

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

(2013) S. J. Sweeney et al.   JOURNAL OF APPLIED PHYSICS

Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam source

(2013) Natsumi Ohta et al.   JOURNAL OF CRYSTAL GROWTH

Imposing changes of band and spin–orbit gaps in GaNBi

(2012) A. Belabbes et al.   SOLID STATE COMMUNICATIONS

Ab initio investigation of structural and electronic properties of zinc blende AlN1−xBix alloys

(2012) M. Mbarki et al.   SOLID STATE COMMUNICATIONS

Ab initio electronic band structure calculation of InP in the wurtzite phase

(2011) Luis C.O. Dacal et al.   SOLID STATE COMMUNICATIONS

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

(2010) Yoon-Suk Kim et al.   PHYSICAL REVIEW B

Composition dependence of photoluminescence of GaAs1−xBix alloys

(2009) Xianfeng Lu et al.   APPLIED PHYSICS LETTERS

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS

Formation of an ordered pattern of Bi nanolines on InAs(100) by self-assembly

(2008) M. Ahola-Tuomi et al.   APPLIED PHYSICS LETTERS

Electronic structure of the filled tetrahedral compound LiCdP and zinc–blende InP: Application of the interstitial insertion rule

(2008) F. Kalarasse et al.   COMPUTATIONAL MATERIALS SCIENCE