Perpendicular magnetic anisotropy and its voltage control in MgO/CoFeB/Mo/CoFeB/MgO junctions
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Title
Perpendicular magnetic anisotropy and its voltage control in MgO/CoFeB/Mo/CoFeB/MgO junctions
Authors
Keywords
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Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 55, Issue 27, Pages 275003
Publisher
IOP Publishing
Online
2022-04-12
DOI
10.1088/1361-6463/ac6634
References
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Related references
Note: Only part of the references are listed.- Perpendicular magnetic anisotropy and its voltage control in MgO/CoFeB/MgO junctions with atomically thin Ta adhesion layers
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- Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions
- (2019) S. Miura et al. IEEE TRANSACTIONS ON MAGNETICS
- Voltage-controlled magnetic tunnel junctions with synthetic ferromagnet free layer sandwiched by asymmetric double MgO barriers
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- Development of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited)
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- Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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- Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses
- (2011) Yoichi Shiota et al. NATURE MATERIALS
- A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
- (2010) S. Ikeda et al. NATURE MATERIALS
- Oxygen-Vacancy-Induced Diffusive Scattering inFe/MgO/FeMagnetic Tunnel Junctions
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- Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
- (2009) S. Yakata et al. JOURNAL OF APPLIED PHYSICS
- Disturbance of Tunneling Coherence by Oxygen Vacancy in EpitaxialFe/MgO/FeMagnetic Tunnel Junctions
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