Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

(2012) M. Gajek et al.   APPLIED PHYSICS LETTERS

CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions

(2012) H. Sato et al.   IEEE Magnetics Letters

Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions

(2011) H. Sato et al.   APPLIED PHYSICS LETTERS

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

(2011) D. C. Worledge et al.   APPLIED PHYSICS LETTERS

Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures

(2011) Huadong Gan et al.   IEEE TRANSACTIONS ON MAGNETICS

Effect of subvolume excitation and spin-torque efficiency on magnetic switching

(2011) J. Z. Sun et al.   PHYSICAL REVIEW B

Influence of quantum confinement on magnetic properties of Fe/Mo/Fe and Fe/Ta/Fe thin-film systems

(2011) E. E. Shalygina et al.   TECHNICAL PHYSICS LETTERS

Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy

(2011) J J Nowak et al.   IEEE Magnetics Letters

Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions

(2010) H. D. Gan et al.   APPLIED PHYSICS LETTERS

Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

(2010) M. Endo et al.   APPLIED PHYSICS LETTERS

Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions

(2010) K. Yakushiji et al.   APPLIED PHYSICS LETTERS

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

(2010) Riichiro Takemura et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

(2010) E. Chen et al.   IEEE TRANSACTIONS ON MAGNETICS

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers

(2009) Toyoo Miyajima et al.   APPLIED PHYSICS LETTERS

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

(2009) K. Mizunuma et al.   APPLIED PHYSICS LETTERS

Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

(2009) G. Feng et al.   JOURNAL OF APPLIED PHYSICS

Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures

(2009) S. V. Karthik et al.   JOURNAL OF APPLIED PHYSICS

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

(2008) Shoun Matsunaga et al.   Applied Physics Express

Sizable room-temperature magnetoresistance in cobalt based magnetic tunnel junctions with out-of-plane anisotropy

(2008) Baptiste Carvello et al.   APPLIED PHYSICS LETTERS

Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes

(2008) Gukcheon Kim et al.   APPLIED PHYSICS LETTERS

Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes

(2008) M. Yoshikawa et al.   IEEE TRANSACTIONS ON MAGNETICS

Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

(2008) Hideto Ohmori et al.   JOURNAL OF APPLIED PHYSICS