Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

Emerging materials and devices in spintronic integrated circuits for energy-smart mobile computing and connectivity

(2013) S.H. Kang et al.   ACTA MATERIALIA

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

(2011) D. C. Worledge et al.   APPLIED PHYSICS LETTERS

Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses

(2011) Yoichi Shiota et al.   NATURE MATERIALS

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

(2009) Hiroaki Yoda et al.   CURRENT APPLIED PHYSICS

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

(2009) T. Maruyama et al.   Nature Nanotechnology

Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy

(2008) Masahiko Nakayama et al.   JOURNAL OF APPLIED PHYSICS