Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design
Published 2015 View Full Article
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Title
Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 28, Issue 5, Pages 864-870
Publisher
Wiley
Online
2015-11-30
DOI
10.1002/adma.201503715
References
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Related references
Note: Only part of the references are listed.- Understanding the Electrical Impact of Edge Contacts in Few-Layer Graphene
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- Tuning the Dirac Point in CVD-Grown Graphene through Solution Processed n-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole
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- (2008) Yu-Ming Lin et al. NANO LETTERS
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