High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
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Title
High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
Authors
Keywords
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Journal
Nature Electronics
Volume 5, Issue 1, Pages 37-44
Publisher
Springer Science and Business Media LLC
Online
2021-12-24
DOI
10.1038/s41928-021-00689-4
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