Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition

Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors

(2019) Cory Lund et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Homogeneity improvement of N-polar $(000\bar{1})$ InGaN/GaN multiple quantum wells by usingc-plane sapphire substrate with off-cut-angle towarda-sapphire plane

(2016) Kanako Shojiki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

(2015) Kanako Shojiki et al.   APPLIED PHYSICS LETTERS

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

(2015) Yachao Zhang et al.   AIP Advances

Significantly Improved Luminescence Properties of Nitrogen-Polar (0001̅) InGaN Multiple Quantum Wells Grown by Pulsed Metalorganic Chemical Vapor Deposition

(2014) Jie Song et al.   ACS Applied Materials & Interfaces

Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal–Organic Vapor Phase Epitaxy

(2013) Duc V. Dinh et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

(2011) Jai Verma et al.   APPLIED PHYSICS LETTERS

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

(2011) Fatih Akyol et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

(2010) Huaping Lei et al.   APPLIED PHYSICS LETTERS

High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

(2010) JunShuai Xue et al.   JOURNAL OF CRYSTAL GROWTH

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

(2009) Hisashi Masui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

(2009) Ryan G. Banal et al.   JOURNAL OF CRYSTAL GROWTH