Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition

(2015) Yachao Zhang et al.   APPLIED PHYSICS LETTERS

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

(2015) J. Hennig et al.   AIP Advances

Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

(2015) YongHe Chen et al.   AIP Advances

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz

(2013) Ronghua Wang et al.   Applied Physics Express

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

(2012) O. Laboutin et al.   APPLIED PHYSICS LETTERS

Transient photoreflectance of AlInN/GaN heterostructures

(2012) S. Marcinkevičius et al.   AIP Advances

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

(2012) D. Broxtermann et al.   AIP Advances

AlGaN/GaInN/GaN heterostructure field-effect transistor

(2011) Hiromichi Ikki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

(2010) S Gökden et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal–Oxide Double Heterostructure Field-Effect Transistors

(2008) Vinod Adivarahan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES