Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Title
Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots
Authors
Keywords
-
Journal
Small
Volume 17, Issue 52, Pages 2102792
Publisher
Wiley
Online
2021-10-15
DOI
10.1002/smll.202102792

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