Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots
出版年份 2021 全文链接
标题
Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots
作者
关键词
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出版物
Small
Volume 17, Issue 52, Pages 2102792
出版商
Wiley
发表日期
2021-10-15
DOI
10.1002/smll.202102792
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