High-Gain Operation of GaAs Photoconductive Semiconductor Switch at 24.3 nJ Excitation

Title
High-Gain Operation of GaAs Photoconductive Semiconductor Switch at 24.3 nJ Excitation
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 6, Pages 751-753
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-04-21
DOI
10.1109/led.2016.2556858

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