Article
Engineering, Electrical & Electronic
Ming Xu, Hangtian Dong, Chun Liu, Yi Wang, Long Hu, Chunpeng Lan, Wei Luo, Harald Schneider
Summary: This study focuses on the transient performance of gallium arsenide photoconductive semiconductor switches (PCSSs) triggered by high-energy laser diodes under high bias electric fields at both single-shot and high frequency excitation. The results show that the electric field has a significant impact on the nonlinear characteristics, with a high carrier avalanche multiplication factor.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Ming Xu, Chun Liu, Wei Luo, Chengjie Wang, Jiahao Chang, Rujun Liu, Qian Liu, Wanli Jia, Guanghui Qu
Summary: The investigation of nonlinear transient characteristics of gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) is of great significance for its applications in pulsed power technology. In this study, the researchers employed a laser diode (LD) with an energy of 2 mu J to trigger the GaAs PCSS. They observed compressed pulse width and increased amplitude as the bias electric field increased. Numerical modeling revealed that these effects can be attributed to negative differential mobility (NDM) and electric-field screening (EFS). The compression of pulse width provides the potential for relieving heat accumulation and suppressing device failure for high-repetition-rate applications.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Wei Shi, Meilin Wu, Cheng Ma, Zhiyuan Chen
Summary: This article presents a method for pulse width modulation of a nonlinear GaAs PCSS through the dual regulation of energy-storage capacitance and current-limiting resistance. The experimental results indicate that different pulse widths can be achieved by controlling the electric field intensity through the addition of different current-limiting resistances and energy-storage capacitance in the circuit.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Computer Science, Information Systems
Qin Zhang, Wei Shi, Cheng Ma, Lei Yang
Summary: This study successfully triggered a 3 mm gap GaAs photoconductive semiconductor switch (GaAs PCSS) using pulsed spark discharge. The GaAs PCSS exhibited a typical linear mode at a low bias voltage, with an on-state current waveform similar to an optical pulse. When biased at 4 kV, the switch entered a nonlinear mode, with a peak current of 33 A and a carriers' multiplication rate of 179. This study indicates that pulsed spark discharge is a promising candidate light source for direct triggering of GaAs PCSSs.
Article
Computer Science, Information Systems
Meilin Wu, Wei Shi
Summary: This study investigates the output electric pulse characteristics of gallium arsenide photoconductive semiconductor switch (GaAs PCSS) with a bias voltage of 20 kV and pulse width of about 100 ns. By designing optical paths, the absorption rate of the trigger optical at a wavelength of 1064 nm was measured to be 24.8%. The avalanche multiplication rates of carriers were calculated at bias voltages of 16 kV-20 kV. The relationship between the output current waveform and the residual charge in the energy storage capacitor at a bias voltage of 20 kV was analyzed. The research has important significance for the application of GaAs PCSS in frontier science.
Article
Engineering, Electrical & Electronic
Long Hu, Jia Huang, Xianghong Yang, Xin Shen, Yue Sun
Summary: The operation mechanism of a gallium nitride (GaN) photoconductive semiconductor switch (PCSS) based on a semi-insulating (SI) wafer was analyzed using a physics-based numerical simulation. The study found that the switch can achieve quasi-avalanche mode and ultrafast switching under specific bias conditions, which is consistent with experimental results. The physics of multiple powerful avalanche domains and their connection to the negative differential mobility (NDM) of electrons were discussed.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yue Sun, Long Hu, Xin Dang, Li Zhu, Xianghong Yang, Jia Huang, Yongdong Li, Xin Li
Summary: The study found that cathode-triggered GaAs PCSS have shorter delay time and lower on-state resistance compared to anode-triggered devices under the same operation conditions. A delay time jitter of approximately 45.6 ps was achieved at a power level of around 4 MW with cathode triggering. The theory of multiple avalanche domains was introduced to explain the influence of laser spot location on triggering efficiency.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Li Zhu, Long Hu, Xin Shen, Xin Dang, Yue Sun, Xin Li, Chuanyu Han, Weihua Liu
Summary: The delay jitter characteristics of GaAs PCSSs triggered in avalanche mode were experimentally investigated under dc bias. The PCSS was tested under a 40-kV bias voltage to verify its withstanding voltage and reliability. The delay jitter time of PCSS at different triggering positions was measured, showing the shortest delay jitter time at the middle position of the cathode electrode. Continuous shots led to an increase in delay jitter time, which was attributed to device damage verified by SEM and EDS analysis. Additionally, a bipolar high-voltage gas switch integrated with PCSSs was successfully triggered by a low-energy fiber laser.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Fluids & Plasmas
Jinhong Wei, Song Li, Langning Wang, Fanzheng Zeng, Junting Wang, Yunrui Yue, Zhaohua Liu, Baoliang Qian
Summary: This article studies the properties of switching transient in the opposed-contact semi-insulating (SI) gallium arsenide photoconductive semiconductor switch (GaAs PCSS). The numerical results show that there is a positive feedback loop between the increase of the carrier density and the formation and evolution of the avalanche domains, achieving ultrafast switching. Higher bias voltage and triggering optical intensity can promote the earlier formation of the avalanche domains and accelerate their evolution, resulting in shorter delay time and switching time. The positions of triggering determine the distribution of avalanche domains in the opposed structure, affecting the delay time, with cathode triggering resulting in the shortest delay time. Current crowding mainly occurs near the contacts in the opposed structure, causing damage to the contact edges and presenting different failure characteristics. Anode triggering is effective in suppressing current crowding to improve the lifetime of the opposed-contact PCSS.
IEEE TRANSACTIONS ON PLASMA SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Liqiang Tian, Hongqi Wang, Dong Jing, Cong Pan, Wei Shi, Chao Zhang
Summary: The formation of avalanche charge domain in high-power GaAs devices has been numerically studied, showing that the peak electric field is mainly influenced by bias electric field, carrier concentration, and device length, while the domain width is primarily affected by carrier concentration and device length. Impact ionization of carriers and avalanche multiplication significantly impact the peak electric field and domain width, indicating a close relationship between their values and the position of the domain during motion. These findings contribute to a deeper understanding of GaAs device breakdown mechanisms and can help optimize device performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Lin Zhang, Chaofan Li, Cheng Ma, Huaimeng Gui, Meilin Wu, Wanli Jia, Wei Shi
Summary: The study compares the time jitters of gallium arsenide photoconductive semiconductor switches triggered by lasers of different wavelengths and proposes a time jitter model to explain the synergy of trigger conditions. Experimental results show a nonmonotonic behavior in time jitter for one wavelength and a monotonic decrease for the other, attributed to differences in carrier velocity fluctuation affected by carrier valley occupation rate. Adjusting macroparameters based on the time jitter model can optimize switch stability and pulse power system performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Ayoub Zumeit, Abhishek Singh Dahiya, Adamos Christou, Rudra Mukherjee, Ravinder Dahiya
Summary: This study presents a printing technique to fabricate high-performance flexible broadband photodetectors on flexible substrates. The detectors demonstrate fast response and recovery times, high responsivity and detectivity, and stable performance under mechanical bending and twisting.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Optics
Cheng Ma, Meilin Wu, Wennan Wang, Yaqiong Jia, Wei Shi
Summary: This paper presents the design of a three-layer GaAs photoconductive semiconductor switch capable of withstanding high voltages from 20 to 35 kV, with the highest reported values for maximum avalanche gain and minimum on-state resistance. The influence of bias voltage on avalanche stability is analyzed, with jitter values calculated at different bias voltages. This work offers guidance for the design of semiconductor switches with high voltage and high gain.
Article
Engineering, Electrical & Electronic
Heng Xie, Yong Fan, Wang Yang Li, Lei Wang, Yu Jian Cheng
Summary: This letter presents a Ka-band watt-level high-efficiency Doherty power amplifier (DPA) monolithic microwave integrated circuit (MMIC) in 90-nm gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology. The proposed DPA exhibits high efficiency at 6-dB power back-off (PBO) with a low-loss compact Doherty output network and optimized peaking amplifier design.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Long Hu, Yue Sun, Li Zhu, Jia Huang, Jun Cheng, Xin Li, Yongdong Li
Summary: The critical state of GaAs photoconductive semiconductor switch (PCSS) is discovered and investigated in a capacitive storage loop. The avalanche ionization of carriers is found to be influenced by the capacitance. The PCSS operates in linear mode when triggered at the anode edge, but still switches on in avalanche mode when triggered at the cathode edge, defining the critical state. The threshold capacitance for the critical state is found to be approximately 27 pF under the experimental conditions.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Ming Xu, Ruibing Li, Cheng Ma, Wei Shi
IEEE ELECTRON DEVICE LETTERS
(2016)
Article
Engineering, Electrical & Electronic
Ming Xu, Mengxia Li, Wei Shi, Cheng Ma, Qin Zhang, Linlin Fan, Xiaoyan Shang, Pengbo Xue
IEEE ELECTRON DEVICE LETTERS
(2016)
Article
Optics
Ming Xu, Kangkang Bian, Cheng Ma, Hangjuan Jia, Xin An, Wei Shi
Article
Engineering, Electrical & Electronic
Wei Shi, Yu Ji, Ming Xu, Cui Chen, Junjun Shi, Shaoqiang Wang, Rujun Liu
IEEE ELECTRON DEVICE LETTERS
(2017)
Article
Engineering, Electrical & Electronic
Ming Xu, Chengang Dong, Wei Shi
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2017)
Article
Materials Science, Multidisciplinary
Zhijin Yan, Wei Shi, Lei Hou, Ming Xu, Lei Yang, Chengang Dong, Shengtao Li
MATERIALS RESEARCH EXPRESS
(2017)
Article
Nanoscience & Nanotechnology
Martin Mittendorff, Ming Xu, Roman J. B. Dietz, Harald Kuenzel, Bernd Sartorius, Harald Schneider, Manfred Helm, Stephan Winnerl
Article
Optics
Wei Shi, Huaimeng Gui, Lin Zhang, Cheng Ma, Mengxia Li, Ming Xu, Luyi Wang
Article
Multidisciplinary Sciences
Wei Shi, Shaoqiang Wang, Cheng Ma, Ming Xu
SCIENTIFIC REPORTS
(2016)
Article
Engineering, Electrical & Electronic
Long Hu, Yaogong Wang, Ming Xu
ELECTRONICS LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Ming Xu, Xiaofei Liu, Mengxia Li, Kai Liu, Guanghui Qu, Vei Wang, Long Hu, Harald Schneider
IEEE ELECTRON DEVICE LETTERS
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Ming Xu, Zhijin Yan, Ruibin Li, Junjie Duan, Like Zhang, Lei Hou, Hong Liu, Wei Shi
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
(2016)
Proceedings Paper
Engineering, Electrical & Electronic
Xiaowei Han, Wei Shi, Lei Hou, Ming Xu, Hong Liu, Yujuan Xu
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
(2016)
Proceedings Paper
Engineering, Electrical & Electronic
Ming Xu, Wei Shi, Xiaoqing He, Zhijing Yan, Hong Liu
2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)
(2015)
