High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric

Published 2016 View Full Article

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Title
High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 5, Pages 556-559
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-03-08
DOI
10.1109/led.2016.2537198

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