High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric

标题
High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 5, Pages 556-559
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-03-08
DOI
10.1109/led.2016.2537198

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