Article
Nanoscience & Nanotechnology
Xinzhe Du, Haoyang Sun, He Wang, Jiachen Li, Yuewei Yin, Xiaoguang Li
Summary: Hf0.5Zr0.5O2-based ferroelectric tunnel junction (FTJ) memristor exhibits high-speed switching of 20 ns, a giant electroresistance ratio of around 834, and good retention exceeding 10(4) s, with multiple states of 8 or three bits. As a solid synaptic device, adjustable synapse functions such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity have been achieved.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Wenxiao Wang, Feifei Yin, Hongsen Niu, Yang Li, Eun Seong Kim, Nam Young Kim
Summary: This study demonstrates the potential of photonic in-memory computing by using a tantalum pentoxide-based memristor as a non-volatile memory. The controllable transition from write-once-read-many-times (WORM) memory to resistive random-access memory (RRAM) is achieved by changing the depositional sequence. In situ photonic Boolean logic operations (AND/OR) are achieved in the RRAM device by combining light and electric signals, showing superior photonic in-memory computing potential.
Article
Computer Science, Artificial Intelligence
Qinghui Hong, Zirui Shi, Jingru Sun, Sichun Du
Summary: A self-learning logic circuit based on memristors is proposed in this paper, which can achieve various logic gates without initialization, showing flexibility and robustness in different logical operations.
NEURAL COMPUTING & APPLICATIONS
(2021)
Article
Engineering, Electrical & Electronic
Junghyeon Hwang, Sehee Lim, Giuk Kim, Seong-Ook Jung, Sanghun Jeon
Summary: This study demonstrates a non-volatile majority function logic unit formed by using a hafnia ferroelectric capacitor for computing in memory and nonvolatile logic-in-memory, showing low voltage, high speed, and improved endurance characteristics. Additionally, a circuit-level analysis of an NV 1bit full adder reveals significant performance improvements.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Kunming Liu, Fang Wang, Xin Shan, Ke Shan, Zexia Ma, Kai Hu, Hongling Guo, Zhitang Song, Kailiang Zhang
Summary: Researchers are investigating memristors to emulate synapse or in-memory computing in order to meet the exponentially increased demand for data processing. They investigated the impact of oxygen content on storage and synaptic performances in Ag/Ta (x) O (y) /ITO memristors to further enhance its performance. By optimizing the oxygen content, the synaptic weight modulation ability increased almost sevenfold. The work lays the foundation for optimizing memory storage and neuromorphic performances in future in-memory computing.
APPLIED PHYSICS EXPRESS
(2023)
Article
Engineering, Electrical & Electronic
Nilesh Pandey, Yogesh Singh Chauhan
Summary: This study focuses on the impact of multi-domain dynamics on the MW of FeFET, finding that domain density, ferroelectric layer thickness, and dielectric layer thickness all influence the MW, and optimizing physical parameters can achieve maximum MW.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Jianhui Zhao, Tianqi Yu, Yiduo Shao, Rui Guo, Weinan Lin, Gongjie Liu, Zhenyu Zhou, YiFei Pei, Jingjuan Wang, Kaixuan Sun, Xiaobing Yan, Jingsheng Chen
Summary: Interface engineering plays a crucial role in modulating the behavior and biological synaptic properties of ferroelectric tunnel memristors (FTMs). The resistive switching behavior of FTMs can be controlled by tailoring the interface, and the synaptic learning properties can also be modulated. An artificial neural network (ANN) system based on interface-engineered FTMs achieves high accuracy in handwritten digital image recognition.
SCIENCE CHINA-MATERIALS
(2023)
Article
Chemistry, Physical
Haoyang Sun, Zhen Luo, Chuanchuan Liu, Chao Ma, Zijian Wang, Yuewei Yin, Xiaoguang Li
Summary: This study reports a flexible FTJ memristor grown on a mica substrate, which exhibits stable voltage-tuned multistates and robust resistive switching behavior after multiple bending cycles. Artificial neural network simulations based on experimental device behaviors demonstrate high recognition accuracies, highlighting the potential applications of this flexible FTJ as a data storage and processing device.
JOURNAL OF MATERIOMICS
(2022)
Article
Chemistry, Analytical
Tommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi
Summary: LIM circuits based on IMPLY and RRAM technologies show promising performance for edge computing, with SIMPLY architecture improving circuit reliability and reducing energy consumption. Generalizing typical logic schemes to multi-input operations significantly reduces execution time for complex functions in BNNs inference tasks.
Article
Chemistry, Physical
Chao Wang, Tianyu Wang, Wendi Zhang, Jun Jiang, Lin Chen, Anquan Jiang
Summary: This research presents synaptic devices made from ferroelectric LiNbO3 thin films, in which synaptic conductance can be linearly modulated by controlling the number of conducting domain walls, resulting in nonvolatile multilevel conductance. These artificial synapses achieve 95.6% recognition accuracy for faces in simulating a neuromorphic network.
Article
Computer Science, Information Systems
John Reuben, Dietmar Fey, Suzanne Lancaster, Stefan Slesazeck
Summary: This study proposes a low-power adder using Ferroelectric Tunnel Junction (FTJ). An FTJ-based majority gate is proposed, which uses a current-mode sensing technique to evaluate the majority of the inputs. By conditionally selecting between the majority and its complement, an XOR operation is implemented, thereby achieving full-adder functionality. To compensate for the slow speed of FTJ-based majority operation, a ternary adder architecture is used.
Article
Engineering, Electrical & Electronic
Wei-Xiang You, Bo-Kai Huang, Pin Su
Summary: This brief presents an alternative approach for reconfigurable logic-in-memory based on the unique ferroelectric minor-loop behavior of FeFET. Simulation shows that NAND/NOR reconfigurability can theoretically be achieved. This approach may be useful when body-effect capability is lacking for nonplanar or 3-D stacked FeFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Multidisciplinary
Jie Yang, Zixuan Jian, Zhongrong Wang, Jianhui Zhao, Zhenyu Zhou, Yong Sun, Mengmeng Hao, Linxia Wang, Pan Liu, Jingjuan Wang, Yifei Pei, Zhen Zhao, Wei Wang, Xiaobing Yan
Summary: In this study, a ferroelectric memristor based on polarization inversion of ferroelectric thin film was proposed. The resistive switching properties were achieved through the combined action of ferroelectricity and oxygen vacancies. The device showed good stability and uniformity, and successfully simulated the function and learning behavior of biological synapses. This research provides a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.
FRONTIERS OF PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Yuan-Yu Huang, Po-Tsang Huang, Po-Yi Lee, Pin Su
Summary: This brief presents a new approach for logic-in-memory using complementary FeFET (CFeFET) which can serve as a 2-to-1 multiplexer and a reconfigurable and nonvolatile multifunction logic gate. The logic functionality of reconfigurable AND/OR/XOR is demonstrated through calibrated SPICE simulation. This study provides insights and facilitates future data-centric computing with advanced FeFET technologies.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Chunyang Li, Lu Li, Fanqing Zhang, Zhongyi Li, Wenfu Zhu, Lixin Dong, Jing Zhao
Summary: In this paper, a high-performance FeFET based on monolayer MoS2 coupled with C60 doped ferroelectric copolymer P(VDF-TrFE) is proposed. The inserted C60 molecules enhance the alignment of dipoles effectively at low voltage, allowing the modified device to demonstrate large memory window, high current on/off ratio, long retention time, and remarkable endurance. In addition, in situ logic application can be realized by constructing facile device interconnection without building complex complementary semiconductor circuits. The results of this study are expected to pave the way for future low consumption computing-in-memory applications based on high-quality 2D FeFETs.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Iosif-Angelos Fyrigos, Vasileios Ntinas, Nikolaos Vasileiadis, Georgios Ch Sirakoulis, Panagiotis Dimitrakis, Yue Zhang, Ioannis G. Karafyllidis
Summary: There is a growing interest in quantum computers and quantum algorithm development due to their potential to solve intractable problems for classical computers. Quantum simulators are essential in developing and testing new algorithms, with memristor arrays showing promise as an efficient tool for simulation.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Multidisciplinary Sciences
Xing Chen, Flavio Abreu Araujo, Mathieu Riou, Jacob Torrejon, Dafine Ravelosona, Wang Kang, Weisheng Zhao, Julie Grollier, Damien Querlioz
Summary: This article introduces a dynamical neural network trained on a minimal amount of data that can predict the behavior of spintronic devices with high accuracy and efficiency. Two experiments are presented to demonstrate the feasibility of the approach.
NATURE COMMUNICATIONS
(2022)
Article
Chemistry, Multidisciplinary
Kun Zhang, Xiaotao Jia, Kaihua Cao, Jinkai Wang, Yue Zhang, Kelian Lin, Lei Chen, Xueqiang Feng, Zhenyi Zheng, Zhizhong Zhang, Youguang Zhang, Weisheng Zhao
Summary: This paper proposes a spintronic multi-level memory unit with high on/off ratio to address the limitations of spintronic devices in advanced computing concepts. By utilizing the rectification effect and spin transfer torque effect, stable multiple resistance states and reconfiguration are achieved. Furthermore, a computing-in-memory architecture based DNN accelerator using this memory unit is evaluated, demonstrating its potential in artificial intelligence applications.
Article
Chemistry, Multidisciplinary
Zhenyi Zheng, Zhizhong Zhang, Xueqiang Feng, Kun Zhang, Yue Zhang, Yu He, Lei Chen, Kelian Lin, Youguang Zhang, Pedram Khalili Amiri, Weisheng Zhao
Summary: In this study, we achieved an anomalous thermal-assisted reduction of spin-orbit torque (SOT) switching current density in a Pt/Co/Tb heterostructure and proposed a multifunctional logic-in-memory device, demonstrating the potential applications and energy efficiency of this mechanism.
Review
Physics, Multidisciplinary
Durgesh Kumar, Tianli Jin, Rachid Sbiaa, Mathias Klaui, Subhankar Bedanta, Shunsuke Fukami, Dafine Ravelosona, See-Hun Yang, Xiaoxi Liu, S. N. Piramanayagam
Summary: Digital data generated by corporate and individual users is growing due to the use of digital applications. While flash memory devices are replacing HDDs in certain applications, HDDs still dominate the storage of digital data in cloud and servers. Domain wall memory (DWM) is a potential alternative to HDDs, offering lower power consumption and higher storage capacity. However, there are challenges to be addressed before DWM can become commercially viable.
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Shengfang Li, Yapeng Chen, Yongfa Zhu, Zhaohao Wang, Jifang Fu, Shilin Yan
Summary: This study reports the preparation of conductive and self-healing ionic gels with adjustable mechanical properties using deep eutectic monomers. The mechanical properties of the ionic gels can be tuned by changing the molar ratio of the monomers, and the presence of multiple hydrogen bonds enables rapid self-healing. Additionally, the ion conductivity of the gels significantly improves after water absorption.
COLLOID AND POLYMER SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Rohit Pachat, Djoudi Ourdani, Maria-Andromachi Syskaki, Alessio Lamperti, Subhajit Roy, Song Chen, Adriano Di Pietro, Ludovic Largeau, Romeo Juge, Maryam Massouras, Cristina Balan, Johannes Wilhelmus van der Jagt, Guillaume Agnus, Yves Roussigne, Mihai Gabor, Salim Mourad Cherif, Gianfranco Durin, Shimpei Ono, Jurgen Langer, Damien Querlioz, Dafine Ravelosona, Mohamed Belmeguenai, Liza Herrera Diez
Summary: The magneto-ionic modulation of the Dzyaloshinskii-Moriya interaction (DMI) and the perpendicular magnetic anisotropy (PMA) in W/CoFeB/HfO2 stacks is investigated by annealing at different temperatures and for varying annealing times. It is found that a large modulation of PMA and DMI is observed in the systems annealed at 390 and 350 degrees C, while no response to voltage is observed in the as-grown samples. The magnetic properties, including domain wall velocity, improve significantly with increasing annealing temperature and time, but the magneto-ionic reversibility is compromised.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Zahir Muhammad, Jan Szpakowski, Ghulam Abbas, Lin Zu, Rajibul Islam, Yan Wang, Faiz Wali, Arka Karmakar, Maciej R. Molas, Yue Zhang, Ling Zhu, Weisheng Zhao, Han Zhang
Summary: Transition metal phosphorus trichalcogenides have spin-charge coupling and lattice vibrations in different layers, which are useful for spintronic and optoelectronic devices. The phonon, magnon and excitonic properties of two-dimensional NiPS3 are investigated using Raman spectroscopy and photoluminescence. The phonon and magnon modes soften with temperature variations due to phonon-phonon coupling and interlayer forces. The polarized Raman shows the anisotropic phonon/magnon orientations. The PL spectra reveal bound excitonic features and ensemble emitters in NiPS3. The fabricated transistor exhibits p-type semiconducting nature and diode characteristics, with potential for optoelectronics. The strong spin-charge interaction provides insights into the magneto-optical and thermal properties of these materials.
Article
Physics, Applied
Cristina Balan, Johannes W. van der Jagt, Jose Pena Garcia, Jan Vogel, Laurent Ranno, Marlio Bonfim, Dafine Ravelosona, Stefania Pizzini, Vincent Jeudy
Summary: The effect of He+ irradiation on the dynamics of chiral domain walls in Pt/Co/AlOx trilayers in the creep regime was studied. Irradiation resulted in a strong decrease in the depinning field and a non-monotonous change of the effective pinning barriers. The variations of domain wall dynamics were mainly due to the strong decrease in the effective anisotropy constant, which increased the domain wall width. However, the strength of the domain wall-disorder interaction was weakly impacted by the irradiation, suggesting that the length-scales of the disorder fluctuation remained smaller than the domain wall width.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Xueqiang Feng, Zhenyi Zheng, Yue Zhang, Zhizhong Zhang, Yixin Shao, Yu He, Xiaohan Sun, Lei Chen, Kun Zhang, Pedram Khalili Amiri, Weisheng Zhao
Summary: In this study, a solid-state oxygen gating device was used to control the magnetic properties of a ferrimagnetic CoTb alloy. The experimental results show that a small voltage can irreversibly tune the alloy from a Tb-dominant state to a stable Co-dominant state and decrease the magnetization compensation temperature. Reversible voltage control of the magnetization axis between out-of-plane and in-plane states was also observed. First-principles calculations suggest that voltage can dynamically control the flow of oxygen ions that bond to the Co sublattice. This research provides an effective approach to manipulate ferrimagnetic order and contributes to the development of ultra-low-power spintronic devices.
Article
Chemistry, Physical
Zhongyi Luo, Zhaohao Wang, Jinshuai Liu, Huihui Jin, Chunhua Han, Xuanpeng Wang
Summary: In this work, carbon nanotubes with Fe nanoparticles connected to a 2D hierarchical carbon network composite were prepared via a low-pressure gas-solid reaction strategy. The use of 3D networks derived from ZIF-8 provided charge modulation functionality to the carbon nanotubes, while the interconnected 2D nanostructures optimized impedance matching and facilitated multiple scattering, ultimately improving the overall microwave absorption performance. The composites prepared at 800 degrees C (Fe-N-C@CNTs-800) achieved the best reflection loss (RL) of -58.5 dB, demonstrating superior microwave absorption performance.
Review
Physics, Applied
Yue Zhang, Xueqiang Feng, Zhenyi Zheng, Zhizhong Zhang, Kelian Lin, Xiaohan Sun, Guanda Wang, Jinkai Wang, Jiaqi Wei, Pierre Vallobra, Yu He, Zixi Wang, Lei Chen, Kun Zhang, Yong Xu, Weisheng Zhao
Summary: Spintronic devices, which use spin instead of charge for information processing, are considered promising candidates for next-generation electronic devices. In recent years, ferrimagnetic materials have emerged as a platform for high-density, high-speed, and low-power-consumption memory and logic functions. By adjusting chemical composition and temperature, ferrimagnets can achieve vanishing magnetization and ultrafast magnetic dynamics. Unlike antiferromagnets, ferrimagnets can be manipulated using conventional electrical read-write methods, making them suitable for applications. This review surveys a wide range of ferrimagnetic materials, including oxides and alloys, and discusses their unique magnetic dynamics and effective methods for manipulating their magnetic states. The review also considers novel storage and computing devices based on ferrimagnets and the challenges that need to be addressed in future applications.
APPLIED PHYSICS REVIEWS
(2023)
Article
Multidisciplinary Sciences
Zhizhong Zhang, Kelian Lin, Yue Zhang, Arnaud Bournel, Ke Xia, Mathias Klaeui, Weisheng Zhao
Summary: This study proposes a neural network based on magnon scattering modulated by an omnidirectional mobile hopfion in antiferromagnets. The states of neurons are encoded in the frequency distribution of magnons, and the connections between them are related to the frequency dependence of magnon scattering. By controlling the hopfion's state, hyperparameters in the network can be modulated, realizing the first verified well-functioning meta-learning device. This research not only breaks the connection density bottleneck but also provides a guideline for future designs of neuromorphic devices.
Article
Engineering, Electrical & Electronic
Kaili Zhang, Deming Zhang, Mingyang Song, Zhipeng Guo, You Wang, Chengzhi Wang, Yue Zhang, Lang Zeng
Summary: This paper presents a novel compute-in-memory (CIM) macro that includes an input generator, 9T1C-SRAM CIM array, and charge-integration-count output (CICO) circuit. The proposed CIM macro achieves pulse-width modulation mapping scheme without counts, enables large-scale CIM array, and achieves high area efficiency. With the 14nm FinFET design kit, the performance of the proposed CIM macro is evaluated and achieves high energy efficiency and test accuracy on MNIST and CIFAR-10 datasets.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2023)
Article
Physics, Applied
G. Masciocchi, J. w. Van Der Jagt, M. -A. Syskaki, J. Langer, G. Jakob, J. Mccord, B. Borie, A. Kehlberger, D. Ravelosona, M. Klaeui
Summary: In this study, it was found that the use of He+ irradiation significantly improves the magnetic softness and magnetostriction of a 30-nm permalloy film. The irradiation treatment results in a reduction in anisotropy and coercivity, as well as a significant decrease in magnetostriction. These improvements are attributed to isotropic crystallite growth and intermixing at the magnetic layer interfaces.
PHYSICAL REVIEW APPLIED
(2023)
