The Effect of Cu2+ Ions and Glycine Complex on Chemical Mechanical Polishing (CMP) Performance of SiC Substrates
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Title
The Effect of Cu2+ Ions and Glycine Complex on Chemical Mechanical Polishing (CMP) Performance of SiC Substrates
Authors
Keywords
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Journal
TRIBOLOGY LETTERS
Volume 69, Issue 3, Pages -
Publisher
Springer Science and Business Media LLC
Online
2021-06-22
DOI
10.1007/s11249-021-01468-0
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Note: Only part of the references are listed.- Investigation on the underwater femtosecond laser polishing SiC ceramic
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- Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing
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- High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching
- (2017) Fusheng Zhang et al. MATERIALS LETTERS
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- XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)
- (2014) Yan Zhou et al. APPLIED SURFACE SCIENCE
- Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001)
- (2014) Xiaolei Shi et al. APPLIED SURFACE SCIENCE
- Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface
- (2013) Guoshun Pan et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials
- (2012) Hideo Aida et al. CURRENT APPLIED PHYSICS
- Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface
- (2011) K. Yamamura et al. CIRP ANNALS-MANUFACTURING TECHNOLOGY
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