Effect of inclusion on 4H-SiC during nano-scratching from an atomistic perspective

Amorphization-governed elasto-plastic deformation under nanoindentation in cubic (3C) silicon carbide

(2020) Liang Zhao et al.   CERAMICS INTERNATIONAL

Enhanced mechanical properties of 4H-SiC by epitaxial carbon films obtained from bilayer graphene

(2020) Kuixin Lin et al.   NANOTECHNOLOGY

Micromechanics of Machining and Wear in Hard and Brittle Materials

(2020) Brian R Lawn et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Defect engineering in SiC technology for high-voltage power devices

(2020) Tsunenobu Kimoto et al.   Applied Physics Express

Abrasive mechanisms and interfacial mechanics of amorphous silicon carbide thin films in chemical-mechanical planarization

(2020) Van-Thuc Nguyen et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing

(2019) Xu Yang et al.   INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE

Brittle-to-ductile transition in elliptical vibration-assisted diamond cutting of reaction-bonded silicon carbide

(2019) Junjie Zhang et al.   Journal of Manufacturing Processes

Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

(2019) K. Puschkarsky et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancement of toughness of SiC through compositing SiC–Al interpenetrating phase composites

(2019) Lu Xie et al.   NANOTECHNOLOGY

Anisotropic mechanical behavior of two dimensional silicon carbide: effect of temperature and vacancy defects

(2019) A S M Jannatul Islam et al.   Materials Research Express

Numerical investigation on the influence of cutting-edge radius and grinding wheel speed on chip formation in SiC grinding

(2018) Wenbo Zhou et al.   CERAMICS INTERNATIONAL

Review of SiC crystal growth technology

(2018) Peter J Wellmann   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO 2 -coated diamond abrasive

(2017) Jing Lu et al.   PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY

Bulk and epitaxial growth of silicon carbide

(2016) Tsunenobu Kimoto   PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

Study on the material removal process in ultrasonic-assisted grinding of SiC ceramics using smooth particle hydrodynamic (SPH) method

(2015) Jianguo Cao et al.   INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY

Nanotribological simulations of multi-grit polishing and grinding

(2015) S.J. Eder et al.   WEAR

Single-grit modeling and simulation of crack initiation and propagation in SiC grinding using maximum undeformed chip thickness

(2014) Dahu Zhu et al.   COMPUTATIONAL MATERIALS SCIENCE

Computational Analysis Methods in Atomistic Modeling of Crystals

(2013) Alexander Stukowski   JOM

The potential of atomistic simulations and the knowledgebase of interatomic models

(2011) E. B. Tadmor et al.   JOM

Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool

(2009) Alexander Stukowski   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Debye temperature of 4H-SiC determined by X-ray powder diffraction

(2009) T. H. Peng et al.   POWDER DIFFRACTION