Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Title
Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2
Authors
Keywords
Silicon carbide (SiC), Chemical mechanical polishing (CMP), Sulfate radical-based advanced oxidation processes (SR-AOPs), Response surface method (RSM), Electrochemical
Journal
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
Volume 295, Issue -, Pages 117150
Publisher
Elsevier BV
Online
2021-03-25
DOI
10.1016/j.jmatprotec.2021.117150

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