Amorphous Ga–Sn–O thin-film crosspoint-type spike-timing-dependent-plasticity device
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Amorphous Ga–Sn–O thin-film crosspoint-type spike-timing-dependent-plasticity device
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 60, Issue 7, Pages 078003
Publisher
IOP Publishing
Online
2021-06-22
DOI
10.35848/1347-4065/ac0d15
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Amorphous metal oxide semiconductor thin film, analog memristor, and autonomous local learning for neuromorphic systems
- (2021) Mutsumi Kimura et al. Scientific Reports
- Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate
- (2020) Xiaoci Liang et al. APPLIED PHYSICS LETTERS
- Memristor property of an amorphous Sn–Ga–O thin-film device deposited using mist chemical-vapor-deposition method
- (2020) Yuta Takishita et al. AIP Advances
- Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications
- (2020) Maria Pereira et al. Advanced Electronic Materials
- Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes
- (2020) Yusaku Magari et al. ACS Applied Materials & Interfaces
- Solution-processed oxide semiconductor-based artificial optoelectronic synapse array for spatiotemporal synaptic integration
- (2020) Seungho Song et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Memristive characteristic of an amorphous Ga-Sn-O thin-film device
- (2019) Sumio Sugisaki et al. Scientific Reports
- Emerging applications using metal-oxide semiconductor thin-film devices
- (2019) Mutsumi Kimura JAPANESE JOURNAL OF APPLIED PHYSICS
- Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
- (2019) Kurasaki et al. Materials
- In–Ga–Zn–O Thin-Film Devices As Synapse Elements in a Neural Network
- (2018) Mutsumi Kimura et al. IEEE Journal of the Electron Devices Society
- Magnetoresistive Effect of Amorphous In-Ga-Zn-O Magnetic Field Sensors
- (2017) Koji Aoki et al. IEEE ELECTRON DEVICE LETTERS
- Demonstration of Detecting Small pH Changes Using High-Sensitivity Amorphous InGaZnO4 Thin-Film Transistor pH Sensor System
- (2017) Kazushige Takechi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thermoelectric effects of amorphous Ga–Sn–O thin film
- (2017) Tokiyoshi Matsuda et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Rare-metal-free high-performance Ga-Sn-O thin film transistor
- (2017) Tokiyoshi Matsuda et al. Scientific Reports
- Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration
- (2015) Yuta Fujimoto et al. AIP Advances
- STDP and STDP variations with memristors for spiking neuromorphic learning systems
- (2013) T. Serrano-Gotarredona et al. Frontiers in Neuroscience
- Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
- (2012) Zhong Qiang Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors
- (2010) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Design for Low Power and Reliable Flexible Electronics: Self-Tunable Cell-Library Design
- (2009) Tsung-Ching Huang et al. Journal of Display Technology
- Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
- (2008) Huaxiang Yin et al. APPLIED PHYSICS LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search