β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

出版年份 2021 全文链接

标题

作者

关键词

出版物

Volume 42, Issue 6, Pages 899-902

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2021-04-10

DOI

10.1109/led.2021.3072052

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