Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder

Unveiling Valley Lifetimes of Free Charge Carriers in Monolayer WSe2

(2020) Manfred Ersfeld et al.   NANO LETTERS

Spin-phonon relaxation from a universal ab initio density-matrix approach

(2020) Junqing Xu et al.   Nature Communications

Encapsulation Narrows and Preserves the Excitonic Homogeneous Linewidth of Exfoliated Monolayer MoSe2

(2020) Eric W. Martin et al.   Physical Review Applied

Spontaneous Valley Polarization of Interacting Carriers in a Monolayer Semiconductor

(2020) J. Li et al.   PHYSICAL REVIEW LETTERS

Detection of thermodynamic “valley noise” in monolayer semiconductors: Access to intrinsic valley relaxation time scales

(2019) M. Goryca et al.   Science Advances

Disorder in van der Waals heterostructures of 2D materials

(2019) Daniel Rhodes et al.   NATURE MATERIALS

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

(2019) Drew Edelberg et al.   NANO LETTERS

Gate Tunable Dark Trions in Monolayer WSe2

(2019) Erfu Liu et al.   PHYSICAL REVIEW LETTERS

Dielectric disorder in two-dimensional materials

(2019) Archana Raja et al.   Nature Nanotechnology

Probing and Manipulating Valley Coherence of Dark Excitons in Monolayer WSe2

(2019) M. R. Molas et al.   PHYSICAL REVIEW LETTERS

Colloquium : Excitons in atomically thin transition metal dichalcogenides

(2018) Gang Wang et al.   REVIEWS OF MODERN PHYSICS

Imaging of pure spin-valley diffusion current in WS2-WSe2heterostructures

(2018) Chenhao Jin et al.   SCIENCE

Light–valley interactions in 2D semiconductors

(2018) Kin Fai Mak et al.   Nature Photonics

Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides

(2018) Sivan Refaely-Abramson et al.   PHYSICAL REVIEW LETTERS

Ab Initio Calculations of Ultrashort Carrier Dynamics in Two-Dimensional Materials: Valley Depolarization in Single-Layer WSe2

(2017) Alejandro Molina-Sánchez et al.   NANO LETTERS

Magnetic brightening and control of dark excitons in monolayer WSe2

(2017) Xiao-Xiao Zhang et al.   Nature Nanotechnology

Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers

(2017) P. Dey et al.   PHYSICAL REVIEW LETTERS

Marrying Excitons and Plasmons in Monolayer Transition-Metal Dichalcogenides

(2017) Dinh Van Tuan et al.   Physical Review X

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

(2017) F. Cadiz et al.   Physical Review X

Observation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures

(2017) Jonghwan Kim et al.   Science Advances

Indirect Bandgap Puddles in Monolayer MoS2by Substrate-Induced Local Strain

(2016) Bong Gyu Shin et al.   ADVANCED MATERIALS

Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe2

(2016) Xinlin Song et al.   NANO LETTERS

Valley- and spin-polarized Landau levels in monolayer WSe2

(2016) Zefang Wang et al.   Nature Nanotechnology

Direct measurement of exciton valley coherence in monolayer WSe2

(2016) Kai Hao et al.   Nature Physics

Long-Lived Valley Polarization of Intravalley Trions in Monolayer WSe2

(2016) Akshay Singh et al.   PHYSICAL REVIEW LETTERS

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide

(2016) Gerd Plechinger et al.   Nature Communications

Tuning Valley Polarization in aWSe2Monolayer with a Tiny Magnetic Field

(2016) T. Smoleński et al.   Physical Review X

Valleytronics in 2D materials

(2016) John R. Schaibley et al.   Nature Reviews Materials

Spin Coherence and Dephasing of Localized Electrons in Monolayer MoS2

(2015) Luyi Yang et al.   NANO LETTERS

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2

(2015) Luyi Yang et al.   Nature Physics

Ultrafast valley relaxation dynamics in monolayerMoS2probed by nonequilibrium optical techniques

(2015) S. Dal Conte et al.   PHYSICAL REVIEW B

Optically initialized robust valley-polarized holes in monolayer WSe2

(2015) Wei-Ting Hsu et al.   Nature Communications

Graphene spintronics

(2014) Wei Han et al.   Nature Nanotechnology

Spin and pseudospins in layered transition metal dichalcogenides

(2014) Xiaodong Xu et al.   Nature Physics

Spin-valley relaxation and quantum transport regimes in two-dimensional transition-metal dichalcogenides

(2014) Hector Ochoa et al.   PHYSICAL REVIEW B

Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayerMoS2: Role of intravalley and intervalley processes

(2014) L. Wang et al.   PHYSICAL REVIEW B

Exciton valley dynamics probed by Kerr rotation inWSe2monolayers

(2014) C. R. Zhu et al.   PHYSICAL REVIEW B

Valley dynamics probed through charged and neutral exciton emission in monolayerWSe2

(2014) G. Wang et al.   PHYSICAL REVIEW B

Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayerMoS2

(2014) T. Yu et al.   PHYSICAL REVIEW B

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS2

(2013) Cong Mai et al.   NANO LETTERS

Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

(2013) H. Ochoa et al.   PHYSICAL REVIEW B

Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry

(2013) Yang Song et al.   PHYSICAL REVIEW LETTERS

Valley polarization in MoS2 monolayers by optical pumping

(2012) Hualing Zeng et al.   Nature Nanotechnology

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Robust optical emission polarization in MoS2monolayers through selective valley excitation

(2012) G. Sallen et al.   PHYSICAL REVIEW B

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Valley-selective circular dichroism of monolayer molybdenum disulphide

(2012) Ting Cao et al.   Nature Communications

Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy

(2011) Régis Decker et al.   NANO LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Origin of spatial charge inhomogeneity in graphene

(2009) Yuanbo Zhang et al.   Nature Physics

Valley-dependent optoelectronics from inversion symmetry breaking

(2008) Wang Yao et al.   PHYSICAL REVIEW B