Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayerMoS2: Role of intravalley and intervalley processes

Carrier and Polarization Dynamics in MonolayerMoS2

(2014) D. Lagarde et al.   PHYSICAL REVIEW LETTERS

Electron spin relaxation in bilayer graphene

(2013) L. Wang et al.   PHYSICAL REVIEW B

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

(2013) H. Ochoa et al.   PHYSICAL REVIEW B

Effective lattice Hamiltonian for monolayer MoS2: Tailoring electronic structure with perpendicular electric and magnetic fields

(2013) Habib Rostami et al.   PHYSICAL REVIEW B

Spin-orbit-mediated spin relaxation in monolayer MoS2

(2013) H. Ochoa et al.   PHYSICAL REVIEW B

Monolayer MoS2: Trigonal warping, theΓvalley, and spin-orbit coupling effects

(2013) Andor Kormányos et al.   PHYSICAL REVIEW B

Electronic properties of the MoS2-WS2heterojunction

(2013) K. Kośmider et al.   PHYSICAL REVIEW B

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

(2013) Xiaodong Li et al.   PHYSICAL REVIEW B

Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2

(2013) E. Cappelluti et al.   PHYSICAL REVIEW B

Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry

(2013) Yang Song et al.   PHYSICAL REVIEW LETTERS

A generic tight-binding model for monolayer, bilayer and bulk MoS2

(2013) Ferdows Zahid et al.   AIP Advances

Electron spin relaxation in rippled graphene with low mobilities

(2012) P. Zhang et al.   JOURNAL OF APPLIED PHYSICS

Valley polarization in MoS2 monolayers by optical pumping

(2012) Hualing Zeng et al.   Nature Nanotechnology

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Hole spin relaxation inp-type (111) GaAs quantum wells

(2012) L. Wang et al.   PHYSICAL REVIEW B

Robust optical emission polarization in MoS2monolayers through selective valley excitation

(2012) G. Sallen et al.   PHYSICAL REVIEW B

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Electronic structure of a single MoS2 monolayer

(2012) Eugene S. Kadantsev et al.   SOLID STATE COMMUNICATIONS

Valley-selective circular dichroism of monolayer molybdenum disulphide

(2012) Ting Cao et al.   Nature Communications

Low-temperature photocarrier dynamics in monolayer MoS2

(2011) T. Korn et al.   APPLIED PHYSICS LETTERS

The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

(2011) Jason K. Ellis et al.   APPLIED PHYSICS LETTERS

Photoluminescence from Chemically Exfoliated MoS2

(2011) Goki Eda et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well

(2011) Lifen Han et al.   Nanoscale Research Letters

Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells

(2010) Y. Zhou et al.   EPL

Spin relaxation in n-type (111) GaAs quantum wells

(2010) B. Y. Sun et al.   JOURNAL OF APPLIED PHYSICS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Ultrafast spin dynamics in optically excited bulk GaAs at low temperatures

(2010) M. Krauß et al.   PHYSICAL REVIEW B

Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction

(2010) Y. Zhou et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Spin dynamics in semiconductors

(2010) M.W. Wu et al.   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

Electron spin relaxation in p-type GaAs quantum wells

(2009) Y Zhou et al.   NEW JOURNAL OF PHYSICS

Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells

(2009) P. Zhang et al.   PHYSICAL REVIEW B

Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach

(2009) J. H. Jiang et al.   PHYSICAL REVIEW B

Effect of electron-electron scattering on spin dephasing in a high-mobility low-density two-dimensional electron gas

(2008) X. Z. Ruan et al.   PHYSICAL REVIEW B