4.8 Article

Interface Engineering Ti3C2 MXene/Silicon Self-Powered Photodetectors with High Responsivity and Detectivity for Weak Light Applications

Journal

SMALL
Volume 17, Issue 23, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202100439

Keywords

MXene; photodetector; self‐ powered; Ti; C-3; (2); van der Waals heterojunction

Funding

  1. Key-Area Research and Development Program of Guangdong Province [2020B010174004]
  2. Guangdong Basic and Applied Basic Research Foundation [2020A1515110185]
  3. Featured Innovation Projects of Colleges and Universities in Guangdong Province [2018KTSCX232]
  4. Wuyi University-Hong Kong-Macau Joint Research and Development Fund [2019WGALH06]
  5. Key Laboratory of Optoelectronic Materials and Applications in Guangdong Higher Education [2017KSYS011]
  6. Innovative Leading Talents of Jiangmen [Jaingren (2019) 7]
  7. GDAS' Project of Science and Technology Development [2019GDASYL-0105060]
  8. Natural Science Foundation of Guangdong Province [2018A0303130334]

Ask authors/readers for more resources

By improving material interfaces and designing heterostructures, a Ti3C2 MXene/Si heterojunction photodetector with ultrahigh specific detectivity and remarkable responsivity at zero external bias was fabricated. The control of MXene thickness and regrowth of interfacial SiOx layer effectively suppressed dark noise current and improved photoresponse, showing high potential for imaging, communication, and sensing applications.
Interfacial engineering and heterostructures designing are two efficient routes to improve photoelectric characteristics of a photodetector. Herein, a Ti3C2 MXene/Si heterojunction photodetector with ultrahigh specific detectivity (2.03 x 10(13) Jones) and remarkable responsivity (402 mA W-1) at zero external bias without decline as with increasing the light power is reported. This is achieved by chemically regrown interfacial SiOx layer and the control of Ti3C2 MXene thickness to suppress the dark noise current and improve the photoresponse. The photodetector demonstrates a high light on/off ratio of over 10(6), an outstanding peak external quantum efficiency (EQE) of 60.3%, while it maintains an ultralow dark current at 0 V bias. Moreover, the device holds high performance with EQE of over 55% even after encapsulated with silicone, trying to resolve the air stability issue of Ti3C2 MXene. Such a photodetector with high detectivity, high responsivity, and self-powered capability is particularly applicable to detect weak light signal, which presents high potential for imaging, communication and sensing applications.

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