A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

Published 2021 View Full Article

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Title
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 5, Pages 673-676
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-03-23
DOI
10.1109/led.2021.3067796

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