Controllable n-type doping in WSe2 monolayer via construction of anion vacancies
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Title
Controllable n-type doping in WSe2 monolayer via construction of anion vacancies
Authors
Keywords
WSe, 2, Electron beam irradiation, Vacancy, Doping, Schottky barrier
Journal
CHINESE CHEMICAL LETTERS
Volume -, Issue -, Pages -
Publisher
Elsevier BV
Online
2021-03-21
DOI
10.1016/j.cclet.2021.03.048
References
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