标题
Controllable n-type doping in WSe2 monolayer via construction of anion vacancies
作者
关键词
WSe, 2, Electron beam irradiation, Vacancy, Doping, Schottky barrier
出版物
CHINESE CHEMICAL LETTERS
Volume -, Issue -, Pages -
出版商
Elsevier BV
发表日期
2021-03-21
DOI
10.1016/j.cclet.2021.03.048
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Hidden Vacancy Benefit in Monolayer 2D Semiconductors
- (2021) Xiankun Zhang et al. ADVANCED MATERIALS
- Enormous enhancement in electrical performance of few-layered MoTe2 due to Schottky barrier reduction induced by ultraviolet ozone treatment
- (2020) Xiaoming Zheng et al. Nano Research
- Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
- (2019) Der-Hsien Lien et al. SCIENCE
- Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization
- (2019) Jun Hong Park et al. ACS Nano
- Two-dimensional transition metal dichalcogenides: interface and defect engineering
- (2018) Zehua Hu et al. CHEMICAL SOCIETY REVIEWS
- Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe2
- (2018) Galan Moody et al. PHYSICAL REVIEW LETTERS
- Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2
- (2018) Zhipeng Li et al. Nature Communications
- Doping engineering and functionalization of two-dimensional metal chalcogenides
- (2018) Peng Luo et al. Nanoscale Horizons
- Defect Activated Photoluminescence in WSe2 Monolayer
- (2017) Zhangting Wu et al. Journal of Physical Chemistry C
- Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization
- (2017) Bo Lei et al. Nano Research
- Structural phase transition in monolayer MoTe2 driven by electrostatic doping
- (2017) Ying Wang et al. NATURE
- Effect of vacancy defect on optoelectronic properties of monolayer tungsten diselenide
- (2017) Zhen Cui et al. OPTICAL AND QUANTUM ELECTRONICS
- Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment
- (2016) Mahmut Tosun et al. ACS Nano
- Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices
- (2016) Xiujuan Zhang et al. ADVANCED MATERIALS
- Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
- (2016) Kin Fai Mak et al. Nature Photonics
- Probing the origin of excitonic states in monolayer WSe 2
- (2016) Jiani Huang et al. Scientific Reports
- Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance
- (2015) Hafiz M. W. Khalil et al. ACS Applied Materials & Interfaces
- Surface Defects on Natural MoS2
- (2015) Rafik Addou et al. ACS Applied Materials & Interfaces
- Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides
- (2015) Philippe K. Chow et al. ACS Nano
- High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
- (2015) Lili Yu et al. NANO LETTERS
- Monolayer MoS2 Heterojunction Solar Cells
- (2014) Meng-Lin Tsai et al. ACS Nano
- Electrical Transport Properties of Single-Layer WS2
- (2014) Dmitry Ovchinnikov et al. ACS Nano
- Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering
- (2014) Damien Voiry et al. Nature Chemistry
- Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
- (2014) Xiaoping Hong et al. Nature Nanotechnology
- Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
- (2014) Jason S. Ross et al. Nature Nanotechnology
- Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
- (2013) Philipp Tonndorf et al. OPTICS EXPRESS
- Hopping transport through defect-induced localized states in molybdenum disulphide
- (2013) Hao Qiu et al. Nature Communications
- Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
- (2013) Sefaattin Tongay et al. Scientific Reports
- Ambipolar MoS2 Thin Flake Transistors
- (2012) Yijin Zhang et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
- (2012) Won Seok Yun et al. PHYSICAL REVIEW B
- Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW LETTERS
- Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets
- (2011) Zhong Jin et al. ACS Nano
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now