Controllable n-type doping in WSe2 monolayer via construction of anion vacancies

标题
Controllable n-type doping in WSe2 monolayer via construction of anion vacancies
作者
关键词
WSe, 2, Electron beam irradiation, Vacancy, Doping, Schottky barrier
出版物
CHINESE CHEMICAL LETTERS
Volume -, Issue -, Pages -
出版商
Elsevier BV
发表日期
2021-03-21
DOI
10.1016/j.cclet.2021.03.048

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