Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device

Title
Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device
Authors
Keywords
Plasma enhanced atomic layer deposition, Silicon dioxide, Diffusion limiting layer, Artificial synapse, Neuromorphic engineering
Journal
APPLIED SURFACE SCIENCE
Volume 547, Issue -, Pages 149140
Publisher
Elsevier BV
Online
2021-01-30
DOI
10.1016/j.apsusc.2021.149140

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