Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device
Authors
Keywords
Plasma enhanced atomic layer deposition, Silicon dioxide, Diffusion limiting layer, Artificial synapse, Neuromorphic engineering
Journal
APPLIED SURFACE SCIENCE
Volume 547, Issue -, Pages 149140
Publisher
Elsevier BV
Online
2021-01-30
DOI
10.1016/j.apsusc.2021.149140
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor
- (2020) Chiao-Fan Chiu et al. Electronics
- Fabrication of a Cu-Cone-Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability
- (2019) Hae Jin Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching
- (2019) Muhammad Ismail et al. APPLIED SURFACE SCIENCE
- Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory
- (2018) Tae Hyung Park et al. ACS Applied Materials & Interfaces
- Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
- (2018) Seokjae Lim et al. IEEE ELECTRON DEVICE LETTERS
- Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
- (2018) Shuang Pi et al. Nature Nanotechnology
- Valence band behaviour of zirconium oxide, Photoelectron and Auger spectroscopy study
- (2018) Zakaria Azdad et al. Scientific Reports
- HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
- (2017) Seungyeol Oh et al. IEEE ELECTRON DEVICE LETTERS
- Comparison of resistive switching characteristics by using e-gun/sputter deposited SiO x film in W/SiO x /TiN structure and pH/creatinine sensing through iridium electrode
- (2017) Sourav Roy et al. JOURNAL OF ALLOYS AND COMPOUNDS
- High performance bi-layer atomic switching devices
- (2017) Jae Hyeok Ju et al. Nanoscale
- Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory
- (2017) Fekadu Gochole Aga et al. NANOTECHNOLOGY
- Analog Synapse Device With 5-b MLC and Improved Data Retention for Neuromorphic System
- (2016) Kibong Moon et al. IEEE ELECTRON DEVICE LETTERS
- Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2Bilayer RRAM Array for Neuromorphic Systems
- (2016) Jiyong Woo et al. IEEE ELECTRON DEVICE LETTERS
- TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing
- (2016) Jaesung Park et al. IEEE ELECTRON DEVICE LETTERS
- Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing
- (2016) Zongwei Wang et al. Nanoscale
- Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells
- (2016) Gang Du et al. AIP Advances
- Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics
- (2015) Chao Du et al. ADVANCED FUNCTIONAL MATERIALS
- An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film
- (2015) Min Kyu Yang et al. APPLIED PHYSICS LETTERS
- Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments
- (2015) Heeyoung Jeon et al. CURRENT APPLIED PHYSICS
- Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure
- (2015) Yingtao Li et al. NANOTECHNOLOGY
- Electrochemical processes and device improvement in conductive bridge RAM cells
- (2015) Ludovic Goux et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Initial stages of oxide formation on the Zr surface at low oxygen pressure: An in situ FIM and XPS study
- (2015) I. Bespalov et al. ULTRAMICROSCOPY
- Electronic system with memristive synapses for pattern recognition
- (2015) Sangsu Park et al. Scientific Reports
- Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor
- (2014) Sungho Kim et al. ACS Nano
- A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory
- (2013) Bin Gao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Ultrafast Synaptic Events in a Chalcogenide Memristor
- (2013) Yi Li et al. Scientific Reports
- Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
- (2011) Ting Chang et al. ACS Nano
- Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
- (2011) Duygu Kuzum et al. NANO LETTERS
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
- (2008) Weihua Guan et al. APPLIED PHYSICS LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More