Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios

Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes

(2021) Dixiong Wang et al.   Physica Status Solidi-Rapid Research Letters

A highly CMOS compatible hafnia-based ferroelectric diode

(2020) Qing Luo et al.   Nature Communications

Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

(2020) Radu Berdan et al.   Nature Electronics

Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

(2020) Dixiong Wang et al.   IEEE ELECTRON DEVICE LETTERS

AlScN: A III-V semiconductor based ferroelectric

(2019) Simon Fichtner et al.   JOURNAL OF APPLIED PHYSICS

Review of memristor devices in neuromorphic computing: materials sciences and device challenges

(2018) Yibo Li et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Defect-Assisted Tunneling Electroresistance in Ferroelectric Tunnel Junctions

(2018) Konstantin Klyukin et al.   PHYSICAL REVIEW LETTERS

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

(2017) Zhongnan Xi et al.   Nature Communications

Possible absence of critical thickness and size effect in ultrathin perovskite ferroelectric films

(2017) Peng Gao et al.   Nature Communications

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

(2016) Wei Jin Hu et al.   Nature Communications

The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film

(2015) K. Liang et al.   JOURNAL OF APPLIED PHYSICS

Functional ferroelectric tunnel junctions on silicon

(2015) Rui Guo et al.   Scientific Reports

Ferroelectric tunnel junctions for information storage and processing

(2014) Vincent Garcia et al.   Nature Communications

Recent Progress in Ferroelectric Diodes: Explorations in Switchable Diode Effect

(2014) Chen Ge et al.   Nano-Micro Letters

Overview of emerging nonvolatile memory technologies

(2014) Jagan Meena et al.   Nanoscale Research Letters

Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

(2013) Morito Akiyama et al.   APPLIED PHYSICS LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Temperature dependence of coercive field and fatigue in poly(vinylidene fluoride-trifluoroethylene) copolymer ultra-thin films

(2011) Xiuli Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Calculation of frequency-dependent coercive field based on the investigation of intrinsic switching kinetics of strained Pb(Zr0.2Ti0.8)O3thin films

(2011) Wei Li et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

(2010) Herbert Schroeder et al.   JOURNAL OF APPLIED PHYSICS

Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

(2009) A. Gruverman et al.   NANO LETTERS

Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

(2009) T. Choi et al.   SCIENCE

Polarization Control of Electron Tunneling into Ferroelectric Surfaces

(2009) P. Maksymovych et al.   SCIENCE