Tuning Supercurrent in Josephson Field-Effect Transistors Using h-BN Dielectric

Gate controlled anomalous phase shift in Al/InAs Josephson junctions

(2020) William Mayer et al.   Nature Communications

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

(2020) Felix Jekat et al.   APPLIED PHYSICS LETTERS

Versatile construction of van der Waals heterostructures using a dual-function polymeric film

(2020) Zhujun Huang et al.   Nature Communications

Multiterminal Josephson Effect

(2020) Natalia Pankratova et al.   Physical Review X

Superconducting proximity effect in epitaxial Al-InAs heterostructures

(2019) William Mayer et al.   APPLIED PHYSICS LETTERS

Evidence of topological superconductivity in planar Josephson junctions

(2019) Antonio Fornieri et al.   NATURE

Two-Dimensional Material Tunnel Barrier for Josephson Junctions and Superconducting Qubits

(2019) Kan-Heng Lee et al.   NANO LETTERS

Josephson Junction Field-Effect Transistors for Boolean Logic Cryogenic Applications

(2019) Feng Wen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Superconducting gatemon qubit based on a proximitized two-dimensional electron gas

(2018) Lucas Casparis et al.   Nature Nanotechnology

Transport properties of near surface InAs two-dimensional heterostructures

(2018) Kaushini S. Wickramasinghe et al.   APPLIED PHYSICS LETTERS

Coherent control of a hybrid superconducting circuit made with graphene-based van der Waals heterostructures

(2018) Joel I-Jan Wang et al.   Nature Nanotechnology

Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors

(2018) Abdullah Alharbi et al.   IEEE ELECTRON DEVICE LETTERS

Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform

(2017) H. J. Suominen et al.   PHYSICAL REVIEW LETTERS

Scaling of Majorana Zero-Bias Conductance Peaks

(2017) Fabrizio Nichele et al.   PHYSICAL REVIEW LETTERS

Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction

(2017) M. Kjaergaard et al.   Physical Review Applied

Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

(2016) Sung Kyu Jang et al.   Scientific Reports

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

(2015) Gwan-Hyoung Lee et al.   ACS Nano

Ballistic Josephson junctions in edge-contacted graphene

(2015) V. E. Calado et al.   Nature Nanotechnology

Gating of high-mobility InAs metamorphic heterostructures

(2015) J. Shabani et al.   APPLIED PHYSICS LETTERS

An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures

(2014) J. Shabani et al.   PHYSICAL REVIEW B

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

(2013) Varistha Chobpattana et al.   APPLIED PHYSICS LETTERS

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric

(2010) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology