Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device

Title
Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device
Authors
Keywords
Hydrothermal process, TiO, 2, nanowire, Nonvolatile memory, Self-rectifying, Forming-free, Oxygen vacancies
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 858, Issue -, Pages 157749
Publisher
Elsevier BV
Online
2020-11-02
DOI
10.1016/j.jallcom.2020.157749

Ask authors/readers for more resources

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation