Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device
出版年份 2020 全文链接
标题
Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device
作者
关键词
Hydrothermal process, TiO, 2, nanowire, Nonvolatile memory, Self-rectifying, Forming-free, Oxygen vacancies
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 858, Issue -, Pages 157749
出版商
Elsevier BV
发表日期
2020-11-02
DOI
10.1016/j.jallcom.2020.157749
参考文献
相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。- Hydrothermally Grown TiO2 Nanorod Array Memristors with Volatile States
- (2020) Carola Ebenhoch et al. ACS Applied Materials & Interfaces
- Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires
- (2020) Karl‐Magnus Persson et al. Advanced Electronic Materials
- Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device
- (2019) Andrey Sergeevich Sokolov et al. NPG Asia Materials
- Low-temperature coexistence of memory and threshold switchings in Pt/TiOx/Pt crossbar arrays
- (2019) H. S. Alagoz et al. APPLIED PHYSICS LETTERS
- Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory
- (2019) Guangdong Zhou et al. APPLIED PHYSICS LETTERS
- Core-shell copper nanowire-TiO2 nanotube arrays with excellent bipolar resistive switching properties
- (2019) Jun Chen et al. ELECTROCHIMICA ACTA
- Highly Uniform Resistive Switching Performances Using Two-dimensional Electron Gas at Thin Film Heterostructure for Conductive Bridge Random Access Memory
- (2019) Sung Min Kim et al. ACS Applied Materials & Interfaces
- Improved capacitive memory of Er:TiO2 TF based MOS device
- (2019) Rini Lahiri et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Resistive switching behavior in memristors with TiO2 nanorod arrays of different dimensions
- (2019) Yantao Yu et al. APPLIED SURFACE SCIENCE
- Effect of hydrogen ions in the adsorbed water layer on the resistive switching properties of hexagonal WO3 nanowire
- (2019) Gang Zhao et al. JOURNAL OF APPLIED PHYSICS
- Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO 2 thin films device
- (2018) Yanmei Yu et al. CHEMICAL PHYSICS LETTERS
- Bipolar resistive switching and memristive properties of hydrothermally synthesized TiO 2 nanorod array: Effect of growth temperature
- (2018) A.C. Khot et al. MATERIALS & DESIGN
- Forming-free sol-gel ZrOx resistive switching memory
- (2018) Chih-Chieh Hsu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
- (2018) Gianluca Milano et al. Nature Communications
- Uniform resistive switching properties of fully transparent TiO 2 -based memory devices
- (2017) Lilan Zou et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO 2 film grown on Cu foil substrate for flexible nonvolatile memory device
- (2017) Hongjun Wang et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Stateful characterization of resistive switching TiO2 with electron beam induced currents
- (2017) Brian D. Hoskins et al. Nature Communications
- A facile hydrothermal synthesis and memristive switching performance of rutile TiO 2 nanowire arrays
- (2016) Zhiqiang Yu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Preparation of MoSe 2 nano-islands array embedded in a TiO 2 matrix for photo-regulated resistive switching memory
- (2016) Pengde Han et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Hydrothermal synthesis and memristive switching behaviors of single-crystalline anatase TiO 2 nanowire arrays
- (2016) Zhiqiang Yu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
- (2016) Ming Xiao et al. Nano-Micro Letters
- Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
- (2016) Ming Xiao et al. Nano-Micro Letters
- Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structure
- (2015) Zhensen Tang et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching behavior of photochemical activation solution-processed thin films at low temperatures for flexible memristor applications
- (2015) Xinghui Wu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior
- (2014) Kai-De Liang et al. ACS Applied Materials & Interfaces
- Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
- (2014) Byoung Kuk You et al. ACS Nano
- Resistive switching of oxygen enhanced TiO2 thin-film devices
- (2013) Iulia Salaoru et al. APPLIED PHYSICS LETTERS
- Fabrication of Ag/TiO2 nanoheterostructures with visible light photocatalytic function via a solvothermal approach
- (2012) Chunyan Su et al. CRYSTENGCOMM
- Direct growth of TiO2nanotubes on transparent substrates and their resistive switching characteristics
- (2012) Dewei Chu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- TiO2—a prototypical memristive material
- (2011) K Szot et al. NANOTECHNOLOGY
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Growth of Oriented Single-Crystalline Rutile TiO2Nanorods on Transparent Conducting Substrates for Dye-Sensitized Solar Cells
- (2009) Bin Liu et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search