Improved capacitive memory of Er:TiO2 TF based MOS device

Title
Improved capacitive memory of Er:TiO2 TF based MOS device
Authors
Keywords
Er:TiO, 2, Interface trap density, CV hysteresis, Memory window, Retention, Endurance
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 792, Issue -, Pages 679-683
Publisher
Elsevier BV
Online
2019-04-09
DOI
10.1016/j.jallcom.2019.04.040

Ask authors/readers for more resources

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now