Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
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Title
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 12, Pages 124511
Publisher
AIP Publishing
Online
2012-12-21
DOI
10.1063/1.4770324
References
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