Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features
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Title
Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features
Authors
Keywords
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Journal
Nanomaterials
Volume 10, Issue 12, Pages 2326
Publisher
MDPI AG
Online
2020-11-24
DOI
10.3390/nano10122326
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